LG -E410 Service Manual page 195

Level LocationNo.
R1007
6 Resistor,Chip
R1008
VA5003
VA5004
6 VA5006 Varistor
VA6000
VA6001
6 FB9001 Filter,Bead
FL5000
FL5002
6 FL5003 Filter,EMI/Power
FL5004
FL5005
R1017
6 Resistor,Chip
R4015
Capacitor
6 C5001
Ceramic,Chip
6 U3001 IC,MCP,eMMC
Inductor
6 L1030
Multilayer,Chip
6 D7000 Diode,Switching
C1081 Capacitor
6
C1096 Ceramic,Chip
VA7009
6 Varistor
VA7010
R2009
6 R3011 Resistor,Chip
R5000
LGE Internal Use Only
13. EXPLODED VIEW & REPLACEMENT PART LIST
Description PartNumber
ERHZ0000517
SEVY0004001
EAM62072101
SFEY0010501
ERHY0000105
ECCH0007804
EAN62583101
ELCH0001033
EDSY0011901
ECCH0005603
SEVY0007901
ERHZ0000406
Spec
MCR01MZP5J910 91OHM 5% 1/16W 1005 R/TP -
ROHM.
EVLC18S02003 18V 0% 3F 1.0*0.5*0.6 NONE
SMD R/TP AMOTECH CO., LTD.
BLM15PD600SN1D 60 ohm 1.0x0.5x0.5 25% 0.06
ohm 1.1A SMD R/TP 2P 0 MURATA
MANUFACTURING CO.,LTD.
ICVE10184E150R101FR ESD/EMI 0HZ 15pF 0H
SMD R/TP INNOCHIPS TECHNOLOGY
MCR01MZP5F51R0 51OHM 1% 1/16W 1005 R/TP
- ROHM.
CL05A225MP5NSNC 2.2uF 20% 10V X5R -
55TO+85C 1005 R/TP 0.5MM - SAMSUNG
ELECTRO-MECHANICS CO., LTD.
H9DP32A4JJBCGR-KEM NAND/4G
SDRAM/4G(2G*2/ 32bit)
2.7VTO3.6V,1.65VTO1.95V,1.7VTO1.95V
11.5x13.0x1.0 TR 153P NAND+DDR SDRAM FGBA
4GB eMMC v4.41+4Gb LPDDR1 MCP (20nm 32Gb
MLC+38nm 2Gb 200MHz LPDDR1) HYNIX
SEMICONDOCTOR
HK1005 1N5S-T 1.5NH 0.3NH - 300mA 0.1OHM
6GHZ 8 SHIELD NONE 1.0X0.5X0.5MM R/TP
TAIYO YUDEN CO.,LTD
SDB310Q 340mV 30V 200mA 1A 0SEC 150mW
EMD2 R/TP 2P 1 AUK CORP
GRM188R61A225K 2.2uF 10% 10V X5R -
55TO+85C 1608 R/TP - MURATA
MANUFACTURING CO.,LTD.
ICVS0505481FR 5.6V 0% 480F 1.0*0.5*0.55 NONE
SMD R/TP INNOCHIPS TECHNOLOGY
MCR01MZP5J104 100KOHM 5% 1/16W 1005 R/TP
- ROHM.
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