Diodes AP63356Q-EVM User Manual

3.8v to 32v input, 3.5a low iq synchronous buck with enhanced emi reduction

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DESCRIPTION
The AP63356Q/AP63357Q is a 3.5A, synchronous
buck converter with a wide input voltage range of
3.8V to 32V and fully integrates an 74mΩ high-
side power MOSFET and a 40mΩ low-side power
MOSFET to provide high-efficiency step-down
DC/DC conversion.
The AP63356Q/AP63357Q device is easily used
by minimizing the external component count due
to its adoption of peak current mode control along
with the integrated compensation network.
FEATURES
Qualified for Automotive Applications
AEC-Q100 Qualified with the Following
Results
o Device Temperature Grade 1: -40C to
125C T
Range
A
o Device HBM ESD Classification Level H1C
o Device CDM ESD Classification Level C3B
VIN 3.8V to 32V
3.5A Continuous Output Current
0.8V ± 1% Reference Voltage
22µA Ultralow Quiescent Current (Pulse
Frequency Modulation)
450kHz Switching Frequency
Pulse Width Modulation (PWM) Regardless of
Output Load
o AP63356Q
Supports Pulse Frequency Modulation (PFM)
o AP63357Q
o Up to 80% Efficiency at 1mA Light Load
o Up to 87% Efficiency at 5mA Light Load
AP63356Q/AP63357Q
Document number: DSxxxxRev. 1 - 1
3.8V TO 32V INPUT, 3.5A LOW IQ SYNCHRONOUS BUCK WITH
The AP63356Q/AP63357Q has optimized design
for Electromagnetic Interference (EMI) reduction.
The
converter
Spectrum (FSS) with a switching frequency jitter of
±6%, which reduces EMI by not allowing emitted
energy to stay in any one frequency for a significant
period of time. It also has a proprietary gate driver
scheme to resist switching node ringing without
sacrificing MOSFET turn-on and turn-off times,
which reduces high-frequency radiated EMI noise
caused by MOSFET switching.
The device is available in a 2x3mm W-QFN2030-13
package.
Proprietary Gate Driver Design for Best EMI
Reduction
Frequency Spread Spectrum (FSS) to
Reduce EMI
Power Good Indicator with 5M Internal Pull-up
Precision Enable Threshold to Adjust UVLO
Protection Circuitry
o Undervoltage Lockout (UVLO)
o Output Overvoltage Protection (OVP)
o Output Undervoltage Protection (UVP)
o Cycle-by-Cycle Peak Current Limit
o Thermal Shutdown
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. "Green" Device
1 of 11
www.diodes.com
AP63356/7/Q-EVM
ENHANCED EMI REDUCTION
features
Frequency
Spread
August 2019
© Diodes Incorporated

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Summary of Contents for Diodes AP63356Q-EVM

  • Page 1 Supports Pulse Frequency Modulation (PFM) o AP63357Q o Up to 80% Efficiency at 1mA Light Load o Up to 87% Efficiency at 5mA Light Load 1 of 11 AP63356Q/AP63357Q August 2019 www.diodes.com © Diodes Incorporated Document number: DSxxxxRev. 1 - 1...
  • Page 2: Functional Block

    0.72V 450kHz – Error Amplifier VSUM – Control 0.8V Logic – Internal SS Comparator 5MΩ Detection 18kΩ COMP 7.6nF Figure 1. Functional Block Diagram 2 of 11 AP63356Q/AP63357Q August 2019 www.diodes.com © Diodes Incorporated Document number: DSxxxxRev. 1 - 1...
  • Page 3: Absolute Maximum Ratings

    RECOMMENDED OPERATING CONDITIONS Symbol Parameter Unit Supply Voltage VOUT Output Voltage Operating Ambient Temperature Range +125 ° C Operating Junction Temperature +150 ° C Range 3 of 11 AP63356Q/AP63357Q August 2019 www.diodes.com © Diodes Incorporated Document number: DSxxxxRev. 1 - 1...
  • Page 4: Evaluation Board

    6. Set the load to 2A through the electronic load. Check for the stable operation of the SW signal on the oscilloscope. Measure the switching frequency. 4 of 11 AP63356Q/AP63357Q August 2019 www.diodes.com © Diodes Incorporated Document number: DSxxxxRev. 1 - 1...
  • Page 5 An external 0.1uF ceramic capacitor is required as bootstrap capacitor between BST and SW pin to work as high side power MOSFET gate driver. 5 of 11 AP63356Q/AP63357Q August 2019 www.diodes.com © Diodes Incorporated Document number: DSxxxxRev. 1 - 1...
  • Page 6: Evaluation Board Schematic

    744 393 461 00 EVALUATION BOARD SCHEMATIC INPUT 100nF OUTPUT 6.8μH VOUT AP63356Q 47pF 157kΩ AP63357Q 2x22µF 10µF 30kΩ COMP Figure 2. Typical Application Circuit 6 of 11 AP63356Q/AP63357Q August 2019 www.diodes.com © Diodes Incorporated Document number: DSxxxxRev. 1 - 1...
  • Page 7 3.8V TO 32V INPUT, 3.5A LOW IQ SYNCHRONOUS BUCK WITH ENHANCED EMI REDUCTION PCB TOP LAYOUT Figure 3. AP63356/7/Q-EVM – Top Layer PCB BOTTOM LAYOUT Figure 4. AP63356/7/Q -EVM – Bottom Layer 7 of 11 AP63356Q/AP63357Q August 2019 www.diodes.com © Diodes Incorporated Document number: DSxxxxRev. 1 - 1...
  • Page 8 X5R/X7R, Ceramic/1206 Output CAP 6.8uH 6060 5.0A Inductor 100K 0603 Enable RES 0603 Bootstrap RES 157K 0603 Voltage set RES* 0603 0603 Comp RES AP63356/7 8 of 11 AP63356Q/AP63357Q August 2019 www.diodes.com © Diodes Incorporated Document number: DSxxxxRev. 1 - 1...
  • Page 9: Typical Performance Characteristics

    3.8V TO 32V INPUT, 3.5A LOW IQ SYNCHRONOUS BUCK WITH ENHANCED EMI REDUCTION TYPICAL PERFORMANCE CHARACTERISTICS Figure 5. Efficiency vs. Output Current for AP63356Q Figure 6. Efficiency vs. Output Current for AP63357Q 9 of 11 AP63356Q/AP63357Q August 2019 www.diodes.com © Diodes Incorporated Document number: DSxxxxRev. 1 - 1...
  • Page 10 VIN = 12V, VOUT = 5V IOUT = 50mA VOUT (50mV/div) (2A/div) (10V/div) 5μs/div Figure 9. AP63356/7 Output Voltage Ripple, VIN = 12V, VOUT = 5V IOUT = 3.5A 10 of 11 AP63356Q/AP63357Q August 2019 www.diodes.com © Diodes Incorporated Document number: DSxxxxRev. 1 - 1...
  • Page 11 Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

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