Diodes AP63300-EVM Manual

3.8v to 32v input, 3a low iq synchronous buck with enchanced emi reduction

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DESCRIPTION
The AP63300/AP63301 is 3A, synchronous buck
converter with a wide input voltage range of 3.8V
to 32V. The device fully integrates a 75mΩ high-
side power MOSFET and a 40mΩ low-side power
MOSFET to provide high-efficiency step-down DC-
DC conversion.
The AP63300/AP63301 device is easily used by
minimizing the external component count due to its
adoption of peak current mode control along with
its integrated loop compensation network.
FEATURES
VIN 3.8V to 32V
3A Continuous Output Current
0.8V ± 1% Reference Voltage
22µA
Ultralow Quiescent
Frequency Modulation)
500kHz Switching Frequency
Supports Pulse Frequency Modulation (PFM)
o AP63300
o Up to 88% Efficiency at 5mA Light Load
Pulse Width Modulation (PWM) Regardless of
Output Load
o AP63301
Proprietary Gate Driver Design for Best EMI
Reduction
AP63300/AP63301
Document number: DS42002 Rev. 3 - 2
3.8V TO 32V INPUT, 3A LOW IQ SYNCHRONOUS BUCK WITH
The AP63300/AP63301 design is optimized for
Electromagnetic Interference (EMI) reduction. The
device has a proprietary gate driver scheme to
resist switching node ringing without sacrificing
MOSFET turn-on and turn-off times, which reduces
high-frequency radiated EMI noise caused by
MOSFET
Frequency Spread Spectrum (FSS) with a switching
frequency jitter of ±6%, which reduces EMI by not
allowing emitted energy to stay in any one
frequency for a significant period of time.
The device is available in a TSOT26 package.
Frequency Spread Spectrum (FSS) to Reduce
EMI
o AP63300
Low-Dropout (LDO) Mode
Current
(Pulse
Precision Enable Threshold to Adjust UVLO
Protection Circuitry
o Undervoltage Lockout (UVLO)
o Output Overvoltage Protection (OVP)
o Cycle-by-Cycle Peak Current Limit
o Thermal Shutdown
1 of 11
www.diodes.com
AP63300/1-EVM
ENCHANCED EMI REDUCTION
switching.
AP63300
also
features
September 2019
© Diodes Incorporated

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Summary of Contents for Diodes AP63300-EVM

  • Page 1 Thermal Shutdown  Pulse Width Modulation (PWM) Regardless of Output Load o AP63301  Proprietary Gate Driver Design for Best EMI Reduction 1 of 11 AP63300/AP63301 September 2019 www.diodes.com © Diodes Incorporated Document number: DS42002 Rev. 3 - 2...
  • Page 2: Functional Block

    = 0.2V/A 0.88V 0.8V Internal Error Amplifier COMP Control VSUM Logic Comparator Thermal Shutdown = 0.84V/T 500kHz Oscillator Figure 1. Functional Block Diagram 2 of 11 AP63300/AP63301 September 2019 www.diodes.com © Diodes Incorporated Document number: DS42002 Rev. 3 - 2...
  • Page 3: Absolute Maximum Ratings

    1000 RECOMMENDED OPERATING CONDITIONS Symbol Parameter Unit Supply Voltage VOUT Output Voltage Operating Ambient Temperature °C Range Operating Junction Temperature +125 °C Range 3 of 11 AP63300/AP63301 September 2019 www.diodes.com © Diodes Incorporated Document number: DS42002 Rev. 3 - 2...
  • Page 4: Evaluation Board

    Figure 2. Top Picture of EV Board QUICK START GUIDE The AP63300-EVM has a simple layout and allows access to the appropriate signals through test points. To evaluate the performance of the AP63300, follow the procedure below: 1. For evaluation board configured at V =5V, connect a power supply to the input terminals V GND.
  • Page 5 22uFx2 3.3V 182 KΩ 62 KΩ 100 pF 22uFx2 157 KΩ 30 KΩ 100 pF 22uFx2 249 KΩ 18 KΩ 56 pF 22uFx4 5 of 11 AP63300/AP63301 September 2019 www.diodes.com © Diodes Incorporated Document number: DS42002 Rev. 3 - 2...
  • Page 6: Evaluation Board Schematic

    (3) The recommended inductance is shown in the table 2 below. EVALUATION BOARD SCHEMATIC 100pF 157K 0.1uF Floating = 5.0 V 6.8mH 22mF*2 = 12 V 10mF Figure 3. Typical Application Circuit 6 of 11 AP63300/AP63301 September 2019 www.diodes.com © Diodes Incorporated Document number: DS42002 Rev. 3 - 2...
  • Page 7 3.8V TO 32V INPUT, 3A LOW IQ SYNCHRONOUS BUCK WITH ENCHANCED EMI REDUCTION PCB TOP LAYOUT Figure 4. AP63300/1-EVM – Top Layer PCB BOTTOM LAYOUT Figure 5. AP63300/1 -EVM – Bottom Layer 7 of 11 AP63300/AP63301 September 2019 www.diodes.com © Diodes Incorporated Document number: DS42002 Rev. 3 - 2...
  • Page 8 Voltage set RES* 162K 0603 R4 & R7 0603 Bootstrap RES AP63300 TSOT23-6 Diodes BCD *Note: The present value of R3/R1 are based on Vout=5.0V 8 of 11 AP63300/AP63301 September 2019 www.diodes.com © Diodes Incorporated Document number: DS42002 Rev. 3 - 2...
  • Page 9: Typical Performance Characteristics

    VIN = 24V, VOUT = 3.3V, L = 4.7μH 0.001 0.010 0.100 1.000 10.000 IOUT (A) Figure 6. AP63301 Efficiency vs. Output Current 9 of 11 AP63300/AP63301 September 2019 www.diodes.com © Diodes Incorporated Document number: DS42002 Rev. 3 - 2...
  • Page 10 ENCHANCED EMI REDUCTION Figure 7. AP63301 Vin=12 Vout=5V Output Voltage Ripple, IOUT = 50mA Figure 8. AP63301 Vin=12 Vout=5V Output Voltage Ripple, IOUT = 3A 10 of 11 AP63300/AP63301 September 2019 www.diodes.com © Diodes Incorporated Document number: DS42002 Rev. 3 - 2...
  • Page 11: Important Notice

    Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

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