Philips CEM3000B Service Manual page 47

1 Semiconductor
Bank Interleave Random Row Write Cycle @CAS Latency=2, Burst Length=4
0 1 2 3
CLK
CKE
CS
RAS
CAS
RAa CAa
ADDR
A11
RAa
A10
DAa0 DAa1 DAa2 DAa3
DQ
WE
UDQM,
LDQM
Row Active
(A-Bank)
Write Command
(A-Bank)
4 5 6 7 8
RBb CBb
RBb
DBb0 DBb1 DBb2 DBb3
Row Active
Precharge Command
(B-Bank)
(A-Bank)
Write Command
(B-Bank)
9 10 11 12 13 14
High
RAc CAc
RAc
DAc0 DAc1
Write Command
(A-Bank)
Precharge Command
(B-Bank)
Row Active
(A-Bank)
FEDD56V16160F-02
MSM56V16160F
15 16 17 18 19
Precharge Command
(A-Bank)
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