Philips CEM3000B Service Manual page 46

1 Semiconductor
Bank Interleave Random Row Read Cycle @CAS Latency=2, Burst Length=4
0 1 2 3
CLK
CKE
CS
RAS
t
RRD
CAS
ADDR RAa CAa
A11
A10 RAa
DQ
WE
UDQM,
LDQM
Row Active
(A-Bank)
Read Command
(A-Bank)
4 5 6 7 8
High
t
RC
RBb CBb
RBb
QAa0 QAa1 QAa2 QAa3
Read Command
Row Active
(B-Bank)
(B-Bank)
Precharge Command
(A-Bank)
9 10 11 12 13 14
RAc CAc
RAc
QBb1 QBb2 QBb3 QBb4
Read Command
(A-Bank)
Row Active
(A-Bank)
Precharge Command
(B-Bank)
FEDD56V16160F-02
MSM56V16160F
15 16 17 18 19
QAc0 QAc1 QAc2 QAc3
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