Memory - LG GM360i Service Manual

3.6 Memory

2Gbit NAND & 1Gbit DDRSDRAM employed on GM360 with 8 & 16 bit parallel data bus thru ADD(0) ~ ADD(29).
The 512Mbit Nand Flash memory with DDRAM stacked device family offers multiple high-performance solutions.
TP114
ADD[16]
D4
ADD[16:29]
ADD[17]
E4
ADD[18]
F4
ADD[19]
G4
ADD[20]
G8
ADD[21]
F8
ADD[22]
E8
ADD[23]
D8
ADD[24]
D9
ADD[25]
G7
ADD[26]
G5
ADD[27]
F7
ADD[28]
E7
ADD[29]
E9
ADD[0]
L4
ADD[0:15]
ADD[1]
M4
ADD[2]
N4
ADD[3]
L5
ADD[4]
M5
ADD[5]
N5
ADD[6]
M6
ADD[7]
N6
ADD[8]
M7
ADD[9]
N7
ADD[10]
L8
ADD[11]
M8
ADD[12]
N8
ADD[13]
L9
ADD[14]
M9
ADD[15]
N9
K6
_BC0
K7
_BC1
L6
LDQS
L7
UDQS
C6
SDCLKI
C7
SDCLKO
D7
CKE
TP105
E5
BA0
TP110
F5
BA1
F6
_RAS
E6
_CAS
D6
_WR
TP106
D5
_RAM_CS
LG Electronics
Copyright © 2010 LG Electronics. Inc. All right reserved.
Only for training and service purposes
GM60i
Large Block Memory
(2048Mbit NAND / 1024 Mbit DDR SDRAM, 1.8V I/O)
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
DQ0
DQ1
DQ2
U101
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
LDQM
UDQM
LDQS
UDQS
_CLK
Caution!!! Need to GND shield in inner layer
CLK
CKE
BA0
BA1
_RAS
_CAS
_WED
_CS
Figure 9 Flash memory & DDR RAM MCP circuit diagram
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I_O0
I_O1
I_O2
I_O3
I_O4
I_O5
I_O6
I_O7
I_O8
I_O9
I_O10
I_O11
I_O12
I_O13
I_O14
I_O15
_CE
_WEN
_RE
ALE
CLE
R__B
_WP
VCCN1
VSS1
VSS2
VSS3
VSS4
VSS5
VSS6
VSSQ
VDD1
VDD2
VDD3
VDDQ1
VDDQ2
- 9 -
3. TECHNICAL BRIEF
TP115
DATA[0]
P10
DATA[0:15]
DATA[1]
N10
DATA[2]
M10
DATA[3]
L10
DATA[4]
F10
DATA[5]
E10
DATA[6]
D10
DATA[7]
C10
DATA[8]
N11
DATA[9]
M11
DATA[10]
L11
DATA[11]
K11
SD_1V8
DATA[12]
G11
DATA[13]
F11
DATA[14]
E11
DATA[15]
D11
TP107
G3
_NAND_CS
TP108
M3
_WR
TP109
F3
_RD
L3
ADD[16]
K3
ADD[17]
E3
N3
SD_1V8
H2
C5
C137
C9
0.1u
G2
H10
P7
SD_1V8
P9
P5
C4
C8
P6
P4
P8
C143 C138 C139 C141 C142
0.1u 0.1u 0.1u 0.1u 0.1u
Star routing
LGE Property
LGE Internal Use Only
FCDP
_WP