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ON Semiconductor NTB30N20 Manual page 6

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1000
V
= 20 V
GS
SINGLE PULSE
T
= 25°C
C
100
10
1
R
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1.0
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
NTB30N20
SAFE OPERATING AREA
10 ms
100 ms
1 ms
10 ms
LIMIT
dc
10
100
1000
0.001
t, TIME (ms)
Figure 13. Thermal Response
di/dt
I
S
t
a
t
p
Figure 14. Diode Reverse Recovery Waveform
http://onsemi.com
500
400
300
200
100
0
25
50
75
T
, STARTING JUNCTION TEMPERATURE (°C)
J
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
P
(pk)
R
qJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
READ TIME AT t
1
t
T
2
J(pk)
DUTY CYCLE, D = t
/t
1
2
0.01
0.1
t
rr
t
b
TIME
0.25 I
S
I
S
6
I
= 30 A
D
100
125
150
(t) = r(t) R
qJC
1
− T
= P
R
(t)
qJC
C
(pk)
1.0
10
175

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