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ON Semiconductor NTB30N20 Manual

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NTB30N20
Power MOSFET
30 Amps, 200 Volts
N−Channel Enhancement−Mode D
Features
•
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
•
Avalanche Energy Specified
•
I
and R
Specified at Elevated Temperature
DSS
DS(on)
•
Mounting Information Provided for the D
•
Pb−Free Packages are Available
Typical Applications
•
PWM Motor Controls
•
Power Supplies
•
Converters
MAXIMUM RATINGS
(T
= 25°C unless otherwise noted)
C
Rating
Drain−to−Source Voltage
Drain−to−Source Voltage (R
GS
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t
Drain Current
− Continuous @ T
− Continuous @ T
− Pulsed (Note 2)
Total Power Dissipation @ T
A
Derate above 25°C
Total Power Dissipation @ T
A
Operating and Storage Temperature Range
Single Drain−to−Source Avalanche Energy,
Starting T
= 25°C
J
(V
= 100 Vdc, V
= 10 Vdc,
DD
GS
I
(pk) = 20 A, L = 3.0 mH, R
L
G
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in
2. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 4
2
PAK Package
Symbol
V
DSS
V
= 1.0 MW)
DGR
V
GS
v10 ms)
V
p
GSM
25°C
I
A
D
100°C
I
A
D
I
DM
= 25°C
P
D
= 25°C (Note 1)
P
D
T
, T
J
stg
E
AS
= 25 W)
R
qJC
R
qJA
R
qJA
T
L
).
2
2
PAK
V
DSS
200 V
Value
Unit
200
Vdc
200
Vdc
Vdc
"30
"40
1
30
Adc
22
90
CASE 418B
214
W
1.43
W/°C
2.0
W
°C
−55 to
+175
mJ
450
°C/W
0.7
Device
62.5
50
NTB30N20
°C
NTB30N20G
260
NTB30N20T4
NTB30N20T4G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
http://onsemi.com
R
TYP
DS(ON)
68 mW @ V
= 10 V
GS
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
4
2
30N20G
AYWW
3
2
D
PAK
1
STYLE 2
Gate
Drain
30N20
= Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Package
2
D
PAK
50 Units/Rail
2
D
PAK
50 Units/Rail
(Pb−Free)
2
D
PAK
800 Tape & Reel
2
D
PAK
800 Tape & Reel
(Pb−Free)
Publication Order Number:
I
MAX
D
30 A
4
2
3
Source
†
Shipping
NTB30N20/D

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Summary of Contents for ON Semiconductor NTB30N20

  • Page 1 NTB30N20 Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode DS(ON) • Avalanche Energy Specified 200 V 68 mW @ V = 10 V 30 A •...

  • Page 2: Electrical Characteristics

    NTB30N20 ELECTRICAL CHARACTERISTICS = 25°C unless otherwise noted) Characteristic Symbol Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (BR)DSS = 250 mAdc) = 0 Vdc, I − − Temperature Coefficient (Positive) − − mV/°C mAdc Zero Gate Voltage Collector Current = 0 Vdc, V = 200 Vdc, T = 25°C)
  • Page 3 NTB30N20 = 10 V ≥ 10 V = 25°C = 25°C = 100°C = −55°C , DRAIN−TO−SOURCE VOLTAGE (VOLTS) , GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics = 10 V = 25°C = 100°C 0.09 0.15 = 10 V 0.08...
  • Page 4 NTB30N20 POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted The capacitance (C ) is read from the capacitance curve at by recognizing that the power MOSFET is charge a voltage corresponding to the off−state condition when controlled. The lengths of various switching intervals (Dt)

  • Page 5: Safe Operating Area

    NTB30N20 1000 = 160 V = 30 A = 10 V d(off) d(on) = 30 A = 25°C , TOTAL GATE CHARGE (nC) , GATE RESISTANCE (W) Figure 8. Gate−To−Source and Drain−To−Source Figure 9. Resistive Switching Time Voltage versus Total Charge Variation versus Gate Resistance DRAIN−TO−SOURCE DIODE CHARACTERISTICS...
  • Page 6 NTB30N20 SAFE OPERATING AREA 1000 = 20 V = 30 A SINGLE PULSE = 25°C 10 ms 100 ms 1 ms 10 ms LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 1000 , DRAIN−TO−SOURCE VOLTAGE (VOLTS) , STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Figure 12.

  • Page 7: Package Dimensions

    SOLDERING FOOTPRINT* 8.38 0.33 1.016 10.66 5.08 0.04 0.42 0.20 3.05 0.12 17.02 0.67 SCALE 3:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com...
  • Page 8 Literature Distribution Center for ON Semiconductor USA/Canada Order Literature: http://www.onsemi.com/litorder P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Japan: ON Semiconductor, Japan Customer Focus Center Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada For additional information, please contact your 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada...