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ON Semiconductor NTB30N20 Manual page 3

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60
V
= 10 V
GS
9 V
50
40
30
20
10
0
0
2
4
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 1. On−Region Characteristics
0.2
V
= 10 V
GS
T
= 100°C
J
0.15
0.1
T
= 25°C
J
0.05
T
= −55°C
J
0
5
15
25
I
, DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance versus Drain Current
and Temperature
3
I
= 15 A
D
V
= 10 V
GS
2.5
2
1.5
1
0.5
0
−50
−25
0
25
50
T
, JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Temperature
NTB30N20
6 V
T
= 25°C
J
8 V
7 V
5 V
4 V
6
8
10
35
45
55
75
100
125
150
175
http://onsemi.com
3
60
≥ 10 V
V
DS
50
40
30
20
T
= 25°C
J
10
T
= 100°C
J
0
0
0
2
V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 2. Transfer Characteristics
0.1
T
= 25°C
J
0.09
V
= 10 V
GS
0.08
0.07
0.06
0.05
5
15
25
I
, DRAIN CURRENT (AMPS)
D
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
100000
V
= 0 V
GS
10000
1000
T
100
10
20
40
60
80
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 6. Drain−to−Source Leakage Current
versus Voltage
T
= −55°C
J
4
6
8
V
= 15 V
GS
35
45
55
T
= 175°C
J
= 100°C
J
100
120
140
160
180
10
200

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