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Philips Semiconductors
Video output amplifier
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices (see "Handling MOS Devices" ).
QUALITY SPECIFICATION
Quality specification "SNW-FQ-611 part E" is applicable, except for ESD Human body model see Chapter "Limiting
values", and can be found in the "Quality reference handbook" (ordering number 9397 750 00192).
THERMAL CHARACTERISTICS
SYMBOL
R
thermal resistance from junction to ambient in free air
th j-a
R
thermal resistance from junction to case
th j-c
Note
1. External heatsink not required.
CHARACTERISTICS
Operating range: T
amb
Test conditions: T
= 25 C; V
amb
measured in test circuit of Fig.5; unless otherwise specified.
SYMBOL
I
quiescent voltage supply current
DD
I
input bias current (pin 3)
bias
V
internal reference voltage input stage V
int
I
offset current of black current
om(os)
measurement output
V
temperature drift of internal
Tint
reference voltage input stage
linearity of current transfer
I
om
----------- -
I
oc
I
maximum peak output current (pin 9) V
of(max)
V
minimum output voltage (pin 8)
oc(min)
V
maximum output voltage (pin 8)
oc(max)
GB
gain bandwidth product of open-loop
gain V
/V
os
i, dm
BW
small signal bandwidth
S
BW
large signal bandwidth
L
1997 Mar 03
PARAMETER
= 20 to +65 C; V
= 180 to 210 V (see note 1), V
DD
= 200 V; V
DD
om
PARAMETER
(1)
= 4 V; C
= 10 pF (C
consists of parasitic and cathode capacitance);
L
L
CONDITIONS
V
= 100 V
ocDC
V
= 100 V
ocDC
= 100 V
ocDC
I
= 0 A;
oc
V
= 1.5 to +3.5 V;
in
V
= 1.4 to 6 V
om
V
= 100 V
ocDC
I
= 10 A to 3 mA;
oc
V
= 1.5 to +3.5 V;
in
V
= 1.4 to 6 V
om
= 20 V to V
30 V
oc
DD
V
= 3.5 V
in
V
= 1.5 V
in
f = 500 kHz;
V
= 100 V
ocDC
V
= 60 V (p-p);
ocAC
V
= 100 V
ocDC
V
= 100 V (p-p);
ocAC
V
= 100 V
ocDC
4
VALUE
56
12
= 1.4 to 6 V.
om
MIN.
TYP.
2.8
3.0
0
2.5
10
0
0.5
0.9
1.0
25
7
V
14
V
DD
DD
0.52
5
6
4.7
5.7
Product specification
TDA6106Q
UNIT
K/W
K/W
MAX.
UNIT
3.3
mA
20
A
V
+10
A
mV/K
1.1
mA
12
V
10
V
GHz
MHz
MHz
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