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Philips Semiconductors
860 MHz, 20 dB gain power doubler amplifier
CHARACTERISTICS
Bandwidth 40 to 900 MHz; V
SYMBOL
PARAMETER
G
power gain
p
SL
slope straight line
FL
flatness straight line
S
input return losses
11
S
output return losses
22
S
phase response
21
CTB
composite triple beat
X
cross modulation
mod
2001 Nov 01
= 24 V; T
= 35 C; Z
B
mb
f = 50 MHz
f = 900 MHz
f = 40 to 900 MHz
f = 40 to 900 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 900 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 750 MHz
f = 750 to 900 MHz
f = 50 MHz
49 channels flat; V
f
= 859.25 MHz
m
77 channels flat; V
f
= 547.25 MHz
m
110 channels flat; V
f
= 745.25 MHz
m
129 channels flat; V
f
= 859.25 MHz
m
110 channels; f
V
= 49 dBmV at 550 MHz; note 1
o
129 channels; f
V
= 49.5 dBmV at 860 MHz; note 2
o
49 channels flat; V
f
= 55.25 MHz
m
77 channels flat; V
f
= 55.25 MHz
m
110 channels flat; V
f
= 55.25 MHz
m
129 channels flat; V
f
= 55.25 MHz
m
110 channels; f
V
= 49 dBmV at 550 MHz; note 1
o
129 channels; f
V
= 49.5 dBmV at 860 MHz; note 2
o
= Z
= 75 .
S
L
CONDITIONS
= 47 dBmV;
o
= 44 dBmV;
o
= 44 dBmV;
o
= 44 dBmV;
o
= 397.25 MHz;
m
= 649.25 MHz;
m
= 47 dBmV;
o
= 44 dBmV;
o
= 44 dBmV;
o
= 44 dBmV;
o
= 397.25 MHz;
m
= 859.25 MHz;
m
3
Product specification
BGD904L
MIN.
TYP.
MAX.
19.7
20
20.3
20.5
21
21.5
0.4
0.9
1.4
0.15
0.3
21
25
22
30
21
29
18
24
17
22
16
21
25
29
23
28
19
25
18
24
17
23
45
+45
65.5
64
67.5
65.5
61
59.5
57
55
61.5
59.5
56
54
64
61
66.5
64
63
60.5
61.5
59
60
57.5
56
53.5
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
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