LG U310 Service Manual page 28

3. TECHNICAL BRIEF
3.5.3 UMTS Power Amplifier (U1002)
The WS2512TR1G meets the increasing demands for higher output power in UMTS handsets. The PA
module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250
chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-
the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency
for different output power levels, and a shutdown mode with low leakage current, increase handset talk
and standby time. The self-contained 4 mm x 4 mm x 1.1 mm surface mount package incorporates
matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.
Figure.3.5.3-1 UMTS PA functional block diagram
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