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Panasonic MA3D755 (MA7D55) Specifications page 2

Schottky barrier diodes silicon epitaxial planar type

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MA3D755
 V
I
F
F
10
75°C 25°C
= 125°C
T
a
−20°C
1
−1
10
−2
10
−3
10
−4
10
0
0.4
0.8
Forward voltage V
 T
I
R
a
2
10
V
R
10
1
−1
10
−2
10
−3
10
−40
0
40
80
120
Ambient temperature T
 T
I
F(AV)
8
6
t
0
1/3
1/6
4
2
0
20
60
100
Case temperature T
2
This product complies with the RoHS Directive (EU 2002/95/EC).
2
10
10
1
−1
10
−2
10
−3
10
1.2
0
10
( V )
F
800
= 60 V
30 V
600
10 V
400
200
0
0
160
200
( °C )
a
C
t
0
t
1
= 1/2
/ t
1
DC
140
( °C )
C
 V
I
R
R
= 125°C
T
a
75°C
25°C
20
30
40
50
60
( V )
Reverse voltage V
R
 V
C
t
R
f = 1 MHz
= 25°C
T
a
20
40
60
Reverse voltage V
( V )
R
SKH00045BED
 T
V
F
a
0.8
0.6
= 2.5 A
I
F
0.4
1 A
0.2
100 mA
0
−40
0
40
80
120
160
( °C )
Ambient temperature T
a
 I
P
D(AV)
F(AV)
20
15
10
t
/ t
0
5
0
0
2
4
Forward current (Average) I
F(AV)
200
t
0
t
1
= 1/6
1
1/3
1/2
DC
6
( A )

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