Panasonic MA3D652 Specifications

Fast Recovery Diodes (FRD)
MA3D652
Silicon planar type (cathode common)
For high-frequency rectification
■ Features
• Low forward voltage V
• Fast reverse recovery time t
• TO-220D (Full-pack package) with high dielectric breakdown
voltage
• Easy-to-mount, caused by its V cut lead end
■ Absolute Maximum Ratings T
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse
surge voltage
Forward current (Average)
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : 50 Hz sine wave 1 cycle (Non-repetitive peak current)
■ Electrical Characteristics T
Parameter
Forward voltage
Repetitive peak reverse current
*
Reverse recovery time
Thermal resistance (j-c)
Thermal resistance (j-a)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. * : t measurement circuit
rr
50 Ω
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA6D52)
F
rr
= 25°C
a
Symbol Rating
V 200
RRM
V 200
RSM
I 20
F(AV)
I 100
FSM
−40 to +150
T
j
−40 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V I
F F
I V
RRM1 RRM
I V
RRM2 RRM
t I
rr F
R
th(j-c)
R
th(j-a)
50 Ω
D.U.T
5.5 Ω
Note) The part number in the parenthesis shows conventional part number.
Unit
V
V
A
Internal Connection
A
°C
°C
Conditions
= 10 A, T = 25°C
C
= 200 V, T = 25°C
C
= 200 V, T = 150°C
j
= 1 A, I = 1 A
R
I
F
I
R
SKJ00004BED
9.9 ±0.3
φ 3.2
±0.1
1.4 ±0.2
1.6 ±0.2
0.8 ±0.1
2.54 ±0.30
5.08 ±0.50
1 2 3
TO-220D-A1 Package
1 2 3
Min Typ Max
1.0
100
10
70
3.0
63
t
rr
0.1 × I
R
Unit: mm
4.6 ±0.2
2.9
±0.2
2.6 ±0.1
0.55 ±0.15
1: Anode
2: Cathode
(Common)
3: Anode
Unit
V
µA
mA
ns
°C/W
°C/W
1