Fast Recovery Diodes (FRD)
MA3D652
Silicon planar type (cathode common)
For high-frequency rectification
■ Features
• Low forward voltage V
• Fast reverse recovery time t
• TO-220D (Full-pack package) with high dielectric breakdown
voltage
• Easy-to-mount, caused by its V cut lead end
■ Absolute Maximum Ratings T
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse
surge voltage
Forward current (Average)
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : 50 Hz sine wave 1 cycle (Non-repetitive peak current)
■ Electrical Characteristics T
Parameter
Forward voltage
Repetitive peak reverse current
*
Reverse recovery time
Thermal resistance (j-c)
Thermal resistance (j-a)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. * : t
measurement circuit
rr
50 Ω
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA6D52)
F
rr
= 25°C
a
Symbol
Rating
V
200
RRM
V
200
RSM
I
20
F(AV)
I
100
FSM
−40 to +150
T
j
−40 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V
I
F
F
I
V
RRM1
RRM
I
V
RRM2
RRM
t
I
rr
F
R
th(j-c)
R
th(j-a)
50 Ω
D.U.T
5.5 Ω
Note) The part number in the parenthesis shows conventional part number.
Unit
V
V
A
Internal Connection
A
°C
°C
Conditions
= 10 A, T
= 25°C
C
= 200 V, T
= 25°C
C
= 200 V, T
= 150°C
j
= 1 A, I
= 1 A
R
I
F
I
R
SKJ00004BED
9.9
±0.3
φ 3.2
±0.1
1.4
±0.2
1.6
±0.2
0.8
±0.1
2.54
±0.30
5.08
±0.50
1
2
3
TO-220D-A1 Package
1
2
3
Min
Typ
Max
1.0
100
10
70
3.0
63
t
rr
0.1 × I
R
Unit: mm
4.6
±0.2
2.9
±0.2
2.6
±0.1
0.55
±0.15
1: Anode
2: Cathode
(Common)
3: Anode
Unit
V
µA
mA
ns
°C/W
°C/W
1