Fast Recovery Diodes (FRD)
MA3DF30
Silicon Mesa type
For high frequency rectification
For plasma display panel drive
Features
High switching speed t
rr
Soft recovery
Absolute Maximum Ratings T
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse surge voltage
Forward current
T
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Note) * : 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Reverse recovery time
*
Thermal resistance (j-a)
Thermal resistance (j-c)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3. * : t
measurement circuit
rr
50 Ω
Publication date: September 2007
This product complies with RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
Rating
V
300
RRM
V
350
RSM
= 25°C
I
20
C
F
*
I
100
FSM
T
–40 to +150
j
T
–40 to +150
stg
= 25°C±3°C
a
Symbol
V
I
= 20 mA
F
F
I
V
RRM
RRM
I
= 0.5 A, I
F
t
rr
I
= 0.25 A
rr
R
th(j-c)
R
th(j-a)
50 Ω
D.U.T
5.5 Ω
Package
Code
TO-220D-A1
Pin Name
1: Anode
2: Cathode
3: Anode
Unit
V
Marking Symbol: MA3DF30
V
A
Intemal Connection
A
°C
°C
Conditions
= 300 V
= 1.0 A
R
I
F
I
R
SKJ00020AED
1
2
3
Min
Typ
Max
Unit
1.3
1.4
50
15
25
3.0
°C/W
63
°C/W
t
rr
0.25 × I
R
V
mA
ns
1