Panasonic MA2J113 (MA113) Specifications

Switching Diodes
MA2J113
Silicon epitaxial planar type
For switching circuits
■ Features
• Allowing high-density mounting
• Ensuring the forward current (Average) capacity I
• High breakdown voltage: V
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t measurement circuit
rr
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA113)
= 80 V
R
= 25°C
a
Symbol Rating
V 80
R
V 80
RM
I 200
F(AV)
I 600
FM
I 1
FSM
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 200 mA
V I
F F
I V
R1 R
I V
R2 R
I V
R3 R
C V
t R
= 10 mA, V
t I
rr F
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
= 200 mA
F(AV)
Unit
V
V
mA
1: Anode
mA
2: Cathode
A
EIAJ: SC-76
Marking Symbol: 1D
°C
°C
Conditions
= 15 V
= 75 V
= 75 V, T = 100°C
a
= 0 V, f = 1 MHz
= 6 V
R
= 0.1 I = 100 Ω
, R
R L
Input Pulse
t t
p
r
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKF00013BED
1.25 ±0.1 0.7
0.35 ±0.1
1
0 to 0.1
2
+0.1
0.16
0.5 ±0.1
–0.06
5˚
SMini2-F1 Package
Min Typ Max
1.1
50
500
100
4
10
Output Pulse
t
rr
I
F
t
= 0.1 I
I
rr R
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
Unit: mm
±0.1
Unit
V
nA
µA
pF
ns
1