Switching Diodes
MA2J1140G
Silicon epitaxial planar type
For small power rectification
■ Features
• S-mini type package, allowing high-density mounting
• High reverse voltage V
R
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Output current
Repetitive peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : t = l s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz.
Publication date: November 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol
Rating
V
150
R
V
150
RM
I
200
O
I
600
FRM
I
1
FSM
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
V
I
F
F
I
V
R
C
V
t
■ Package
• Code
• Pin Name
Unit
V
■ Marking Symbol: 1E
V
mA
mA
A
°C
°C
Conditions
= 200 mA
= 150 V
R
= 0 V, f = 1 MHz
R
SKF00093AED
SMini2-F3
1: Anode
2: Cathode
Min
Typ
4.5
Max
Unit
1.2
V
200
nA
pF
1