Rectifier Diodes
MA2J114
Silicon epitaxial planar type
For small power rectification
■ Features
• S-mini type package, allowing high-density mounting
• High reverse voltage V
R
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Output current
Repetitive peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : t = l s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz.
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA114)
= 25°C
a
Symbol
Rating
V
150
R
V
150
RM
I
200
O
I
600
FRM
I
1
FSM
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 200 mA
V
I
F
F
= 150 V
I
V
R
R
= 0 V, f = 1 MHz
C
V
t
R
Note) The part number in the parenthesis shows conventional part number.
SKC00001BED
1.25
±0.1
Unit
5˚
V
V
mA
mA
1: Anode
A
2: Cathode
EIAJ: SC-76
°C
Marking Symbol: 1E
°C
Conditions
Unit: mm
0.7
±0.1
0.35
±0.1
1
0 to 0.1
2
+0.1
0.16
0.5
±0.1
–0.06
SMini2-F1 Package
Min
Typ
Max
1.2
200
4.5
Unit
V
nA
pF
1