Switching Diodes
MA2J111
Silicon epitaxial planar type
For switching circuits
■ Features
• Allowing high-density mounting
• Short reverse recovery time t
• Small terminal capacitance C
• High breakdown voltage: V
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : t = 1 s
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. * : t
measurement circuit
rr
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA111)
rr
t
= 80 V
R
= 25°C
a
Symbol
Rating
V
80
R
V
80
RM
I
100
F
I
225
FM
I
500
FSM
T
150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 100 mA
V
I
F
F
V
I
R
R
I
V
R
R
C
V
t
R
= 10 mA, V
t
I
rr
F
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
Unit
V
V
mA
1: Anode
mA
2: Cathode
mA
EIAJ: SC-76
Marking Symbol: 1B
°C
°C
Conditions
= 100 µA
= 75 V
= 0 V, f = 1 MHz
= 6 V
R
= 0.1 I
= 100 Ω
, R
R
L
Input Pulse
t
t
r
p
t
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
SKF00011BED
1.25
0.7
±0.1
0.35
±0.1
1
0 to 0.1
2
+0.1
0.16
0.5
±0.1
–0.06
5˚
SMini2-F1 Package
Min
Typ
Max
0.95
1.20
80
100
0.6
1.2
3
Output Pulse
t
rr
I
F
t
= 0.1 I
I
rr
R
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
Unit: mm
±0.1
Unit
V
V
nA
pF
ns
1