Schottky Barrier Diodes (SBD)
MA2J704
Silicon epitaxial planar type
For super high speed switching
■ Features
• Forward current (Average) I
• Small reverse current I
products)
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Peak forward current
Forward current (Average)
Non-repetitive peak forward
*
surge current
Junction temperature
Storage temperature
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
*
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz.
4. * : t
measurement circuit
rr
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
(MA10704)
= 200 mA rectification is possible
F(AV)
(About 1/10 of I
of the ordinary
R
R
= 25°C
a
Symbol
Rating
V
20
R
V
20
RRM
I
300
FM
I
200
F(AV)
I
1
FSM
T
125
j
−55 to +125
T
stg
= 25°C ± 3°C
a
Symbol
= 200 mA
V
I
F
F
I
V
R1
R
I
V
R2
R
C
V
t
R
= I
t
I
rr
F
= 0.1 I
I
rr
A
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
Note) The part number in the parenthesis shows conventional part number.
SKH00013BED
Unit
V
V
1 : Anode
mA
2 : Cathode
EIAJ : SC-76
mA
A
Marking Symbol: 2S
°C
°C
Conditions
= 10 V
= 20 V
= 0 V, f = 1 MHz
= 100 mA
R
= 100 Ω
, R
R
L
Input Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
1.25
±0.1
0.7
0.35
±0.1
1
0 to 0.1
2
+0.1
0.16
0.5
±0.1
–0.06
5˚
SMini2-F1 Package
Min
Typ
Max
0.55
2
5
30
3.0
Output Pulse
t
t
rr
I
F
t
= 0.1 I
I
rr
R
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
Unit: mm
±0.1
Unit
V
µA
pF
ns
1