PIN diodes
MA2JP02
Silicon epitaxial planar type
For high frequency switch
■ Features
• Small terminal capacitance C
• Small forward dynamic resistance r
• Miniature package and surface mounting type
■ Absolute Maximum Ratings T
Parameter
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Forward voltage
Reverse current
Terminal capacitance
Forward dynamic resistance
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: March 2004
This product complies with the RoHS Directive (EU 2002/95/EC).
t
f
= 25°C
a
Symbol
Rating
V
60
R
I
100
F
P
150
D
150
T
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 10 mA
V
I
F
F
= 60 V
I
V
R
R
= 1 V, f = 1 MHz
C
V
t
R
r
I
= 10 mA, f = 100 MHz
f
F
SKL00009BED
1.25
5˚
Unit
V
mA
mW
°C
°C
EIAJ: SC-76
Marking Symbol: 3F
Conditions
Unit: mm
±0.1
0.7
±0.1
0.35
±0.1
1
0 to 0.1
2
+0.1
0.16
0.5
±0.1
–0.06
1: Anode
2: Cathode
SMini2-F1 Package
Min
Typ
Max
1.0
100
0.5
2.0
Unit
V
nA
pF
Ω
1