Panasonic Infrared Light Emitting Diodes LN77L Specifications

Infrared Light Emitting Diodes
LN77L
GaAIAs Infrared Light Emitting Diode
For optical control systems
 Features
 High-power output, high-efficiency: P
 Fast response and high-speed modulation capability: f
 Wide directivity: θ = 20° (typ.)
 Transparent epoxy resin package
 Absolute Maximum Ratings T
Parameter
Power dissipation
Forward current
Pulse forward current *
Reverse voltage
Operating ambient temperature
Storage temperature
Note) * : f = 100 Hz, Duty cycle = 0.1%
 Electro-Optical Characteristics T
Parameter
Radiant power
Reverse current
Forward voltage
Peak emission wavelength
Spectral half band width
Half-power angle
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Modulation total power output 3 dB frequency to fall from 1 MHz.
Cutoff frequency: 20 MHz
P at f = f
O
f : 10 × log
C
P at f = 1 MHz
O
3. LED might radiate red light under large current drive.
4. * : A light detection element uses a silicon diode have proofread a load with a standard device.
Publication date: October 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 18 mW (typ.)
O
= 20 MHz (typ.)
C
= 25°C
a
Symbol Rating
P 190
D
I 100
F
I 1
FP
V 3
R
T –25 to +85
opr
T –30 to +100
stg
= 25°C±3°C
a
Symbol
P I = 50 mA
O F
I V = 3 V
R R
V I = 100 mA
F F
I = 50 mA
λ
P F
I = 50 mA
Δλ
F
θ The angle when the radiant power is halved.
C
= –3
SHC00023CED
Unit
mW
mA
A
V
°C
°C
Conditions Min
10
Typ Max Unit
18 mW
10 µA
1.6 1.9 V
860 nm
40 nm
20 °
1