Infrared Light Emitting Diodes
LN77L
GaAIAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency: P
Fast response and high-speed modulation capability: f
Wide directivity: θ = 20° (typ.)
Transparent epoxy resin package
Absolute Maximum Ratings T
Parameter
Power dissipation
Forward current
Pulse forward current
*
Reverse voltage
Operating ambient temperature
Storage temperature
Note) * : f = 100 Hz, Duty cycle = 0.1%
Electro-Optical Characteristics T
Parameter
Radiant power
Reverse current
Forward voltage
Peak emission wavelength
Spectral half band width
Half-power angle
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Modulation total power output 3 dB frequency to fall from 1 MHz.
Cutoff frequency: 20 MHz
P
at f = f
O
f
: 10 × log
C
P
at f = 1 MHz
O
3. LED might radiate red light under large current drive.
4. * : A light detection element uses a silicon diode have proofread a load with a standard device.
Publication date: October 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
= 18 mW (typ.)
O
= 20 MHz (typ.)
C
= 25°C
a
Symbol
Rating
P
190
D
I
100
F
I
1
FP
V
3
R
T
–25 to +85
opr
T
–30 to +100
stg
= 25°C±3°C
a
Symbol
P
I
= 50 mA
O
F
I
V
= 3 V
R
R
V
I
= 100 mA
F
F
I
= 50 mA
λ
P
F
I
= 50 mA
Δλ
F
θ
The angle when the radiant power is halved.
C
= –3
SHC00023CED
Unit
mW
mA
A
V
°C
°C
Conditions
Min
10
Typ
Max
Unit
18
mW
10
µA
1.6
1.9
V
860
nm
40
nm
20
°
1