Download Print this page

Panasonic 2SC5609G Specification Sheet page 2

Transistors

Advertisement

2SC5609G
2SD5609G_P
P
 T
C
140
120
100
80
60
40
20
0
0
40
80
Ambient temperature T
2SC5609G_I
I
 V
C
120
100
T
= 75°C
a
80
60
25°C
40
20
0
0
0.2
0.4
Base-emitter voltage V
2SC5609G_h
h
 I
FE
400
T
= 75°C
320
a
25°C
240
−25°C
160
80
0
1
10
Collector current I
2
This product complies with the RoHS Directive (EU 2002/95/EC).
-T
C
a
a
50
T
a
40
30
20
10
0
0
120
Collector-emitter voltage V
( °C )
a
-V
C
BE
BE
100
V
CE
80
60
40
−25°C
20
0
0.6
0.8
1.0
0
( V )
Base-emitter voltage V
BE
-I
FE
C
C
V
= 10 V
CE
100
1 000
( mA )
C
2SC5609G_I
-V
C
CE
I
 V
C
CE
I
= 160 µA
B
= 25°C
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
20 µA
4
8
12
( V )
CE
2SC5609G_I
-V
B
BE
I
 V
B
BE
= 10 V
0.2
0.4
0.6
0.8
( V )
BE
SJC00427BED
2SC5609G_I
-I
C
B
I
 I
C
B
180
V
= 10 V
CE
T
= 25°C
160
a
140
120
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
1.0
( V )
Base current I
B
2SC5609G_V
-I
CE(sat)
C
V
 I
CE(sat)
C
1
I
/I
C
0.1
T
= 75°C
a
25°C
−25°C
0.01
1
10
100
( mA )
Collector current I
C
1.2
= 10
B
1 000

Advertisement

loading