Panasonic 2SC5654 Specification Sheet

Transistors
2SC5654
Silicon NPN epitaxial planar type
For DC-DC converter
■ Features
• Low collector-emitter saturation voltage V
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
This product complies with the RoHS Directive (EU 2002/95/EC).
CE(sat)
= 25°C
a
Symbol Rating
V 20
CBO
V 20
CEO
V 5
EBO
I 1
C
I 3
CP
P 150
C
T 150
j
−55 to +150
T
stg
= 25°C ± 3°C
a
Symbol
= 10 µA, I
V I
CBO C
= 1 mA, I
V I
CEO C
= 10 µA, I
V I
EBO E
= 2 V, I
h V
FE CE
= 200 mA, I
V I
CE(sat) C
f V
T CB
C V
ob CB
SJC00187BED
Unit
V
V
V
A
A
Marking Symbol: 2S
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 100 mA
C
= 10 mA
B
= 10 V, I = −10 mA, f = 200 MHz
E
= 10 V, I = 0, f = 1 MHz
E
+0.1
0.3
–0.0
3
1 2
(0.65) (0.65)
1.3 ±0.1
2.0 ±0.2
10˚
SMini3-G1 Package
Min Typ Max
20
20
5
160 560
60 100
180
12 30
Unit: mm
+0.10
0.15
–0.05
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
Unit
V
V
V

mV
MHz
pF
1