Panasonic 2SC5950G Specification Sheet

Transistors
2SC5950G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2122G
 Features
 High forward current transfer ratio h
 Smini typ package, allowing downsizing of the equipment and automatic
insertion through the tape packing
 Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
 Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
= 25°C
a
Symbol Rating
V 60
CBO
V 50
CEO
V 7
EBO
I 100
C
I 200
CP
P 150
C
T 150
j
T -55 to +150
stg
= 25°C±3°C
a
Symbol
V I = 10 mA, I
CBO C
V I = 2 mA, I
CEO C
V I = 10 mA, I
EBO E
I V = 20 V, I
CBO CB
I V = 10 V, I
CEO CE
h V = 10 V, I
FE CE
V I = 100 mA, I
CE(sat) C
f V = 10 V, I
T CB
C V = 10 V, I
ob CB
SJC00371AED
 Package
 Code
SMini3-F2
 Marking Symbol: 7M
 Pin Name
1: Base
2: Emitter
Unit
3: Collector
V
V
V
mA
mA
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 0
E
= 0
B
= 2 mA
C
= 10 mA
B
= -2 mA, f = 200 MHz
E
= 0, f = 1 MHz
E
Min Typ Max Unit
60
50
7
0.1
100
160 460
0.1 0.3
100 MHz
2.2
V
V
V
mA
mA

V
pF
1