Panasonic 2SC5609G Specification Sheet

Transistors
2SC5609G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2021G
 Features
 High forward current transfer ratio h
 Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
 Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Pulse measurement
Publication date : November 2008
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
= 25°C
a
Symbol Rating
V 60
CBO
V 50
CEO
V 7
EBO
I 100
C
I 200
CP
P 100
C
T 125
j
T –55 to +125
stg
= 25°C±3°C
a
Symbol
V I = 10 mA, I
CBO C
V I = 2 mA, I
CEO C
V I = 10 mA, I
EBO E
I V = 20 V, I
CBO CB
I V = 10 V, I
CEO CE
h V = 10 V, I
FE1 CE
h * V = 2 V, I
FE2 CE
V I = 100 mA, I
CE(sat) C
f V = 10 V, I
T CB
C V = 10 V, I
re CB
SJC00427BED
 Package
 Code
SSSMini3-F2
 Pin Name
1. Base
Unit
2. Emitter
V
3. Collector
V
V  Marking Symbol: 3F
mA
mA
mW
°C
°C
Conditions
= 0
E
= 0
B
= 0
C
= 0
E
= 0
B
= 2 mA
C
= 100 mA
C
= 10 mA
B
= –2 mA, f = 200 MHz
E
= 0, f = 1 MHz
E
Min Typ Max Unit
60
50
7
0.1
100
180 390
90
0.1 0.3
80 MHz
3.5
V
V
V
mA
mA

V
pF
1