Panasonic 2SC5846G Specification Sheet

Transistors
2SC5846G
Silicon NPN epitaxial planar type
For general amplification
■ Features
High forward current transfer ratio h
SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Collector output capacitance
(Common base, input open circuited)
Transition frequency
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
FE
25 C
a
Symbol Rating
V 60
CBO
V 50
CEO
V
EBO
I 100
C
I 200
CP
P 100
C
T 125
j
T 55 to 125
stg
25 C 3 C
a
Symbol
V I
CBO C
V I
CEO C
V I
EBO E
I V
CBO CB
I V
CEO CE
h V
FE CE
V I
CE(sat) C
C V
ob CB
f V
T CB
Unit
V
V
7 V
mA
mA
mW
C
C
Conditions
10 , I 0
E
2 mA, I 0
B
10 , I 0
C
20 V, I 0
E
10 V, I 0
B
10 V, I 2 mA
C
100 mA, I 10 mA
B
10 V, I 0, f 1 MHz
E
10 V, I 2 mA, f = 200 MHz
E
SJC00399AED
SSSMini3-F1 Package
■ Package
Code
SSSMini3-F2
Marking Symbol: 7K
Pin Name
1. Base
2. Emitter
3. Collector
Min Typ Max
60
50
7
0.1
100
180 390
0.1 0.3
2.2
100
Unit
V
V
V
A
A
V
pF
MHz
1