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Panasonic 2SC6050 Specification Sheet

Transistors

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Transistors
2SC6050
Silicon NPN epitaxial planar type
For high frequency amplifi cation, oscillation and mixing
 Features
 Features
 High transition frequency f
 High transition frequency f
High transition frequency f
High transition frequency f
T
T
 Small collector output capacitance (Common base, input open circuited) C
 Small collector output capacitance (Common base, input open circuited) C
and reverse transfer capacitance (Common base) C
 Optimum for high-density mounting and downsizing of the equipment for
 Optimum for high-density mounting and downsizing of the equipment for
Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
 Absolute Maximum Ratings
 Absolute Maximum Ratings
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
 Electrical Characteristics
 Electrical Characteristics
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Reverse transfer capacitance (Common base)
Collector-base parameter
h
h
h ratio
ratio
FE
FE
FE
FE
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2005
This product complies with the RoHS Directive (EU 2002/95/EC).
rb
T
= 25
= 25
°C
a
a
a
Symbol
Rating
V
15
CBO
V
10
CEO
V
3
EBO
I
50
C
P
100
C
T
T
T
125
j
j
T
T
T
−55 to +125
stg
stg
T
= 25
= 25
°C±3°C
a
a
a
Symbol
V
I
= 2 mA, I
CEO
C
V
I
= 10
= 10
µA, I
EBO
E
E
E
I
V
= 10 V, I
CBO
CB
h
h
h
V
= 4 V, I
= 4 V, I
FE
FE
CE
CE
CE
V
I
= 20 mA, I
CE(sat)
C
f
f
f
V
= 4 V, I
T
T
CB
C
V
= 4 V, I
ob
CB
C
V
= 4 V, I
rb
CB
r
r
r  c  c 
V
= 4 V, I
bb'
bb'
c
CB
V
= 4 V, I
= 4 V, I
CE
CE
CE
∆h
∆h
h
h
FE
FE
5 mA
SJC00335AED
3
ob
1.00
Unit
V
V
1: Base
V
2: Emitter
3: Collector
mA
mW
Marking Symbol: 6N
°C
°C
Conditions
= 0
B
= 0
C
= 0
= 0
E
E
E
= 5 mA
C
= 4 mA
B
=
=
−5 mA, f = 200 MHz
E
E
E
= 0, f = 1 MHz
= 0, f = 1 MHz
E
E
E
= 0, f = 1 MHz
= 0, f = 1 MHz
E
E
E
=
=
−5 mA, f = 31.9 MHz
E
E
E
= 100 µA / V
= 4 V, I
= 4 V, I
=
=
C
CE
CE
CE
C
C
C
Unit: mm
2
1
+0.01
0.39
±0.05
−0.03
0.25
0.25
±0.05
±0.05
1
3
2
0.65
0.05
±0.01
ML3-N2 Package
Min
Typ
Max
Unit
10
3
1
75
400
0.5
1.4
1.9
2.7
GHz
1.4
0.45
11
0.75
1.6
±0.03
V
V
µA
V
pF
pF
ps
1

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Summary of Contents for Panasonic 2SC6050

  • Page 1 This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC6050 Silicon NPN epitaxial planar type For high frequency amplifi cation, oscillation and mixing  Features  Features   High transition frequency f  High transition frequency f High transition frequency f High transition frequency f ...
  • Page 2 Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.