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Panasonic 2SB1679G Specification Sheet page 2

Silicon pnp epitaxial planar type transistors

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2SB1679G
 T
P
C
a
200
160
120
80
40
0
0
40
80
Ambient temperature T
 I
V
CE(sat)
−1
− 0.1
= 85°C
T
a
25°C
− 0.01
−1
−10
−100
Collector current I
C
2
This product complies with the RoHS Directive (EU 2002/95/EC).
1 000
= 25°C
T
a
900
800
700
600
500
400
300
200
100
0
120
160
0
( °C )
Collector-emitter voltage V
a
C
−10
= 50
I
/ I
C
B
−1
−25°C
− 0.1
−1 000
−1
( mA )
 V
I
C
CE
= 5.0 mA
I
B
4.5 mA
4.0 mA
3.5 mA
3.0 mA
2.5 mA
2.0 mA
1.5 mA
1.0 mA
0.5 mA
2
3
4
5
6
1
( V )
CE
 I
V
BE(sat)
C
= 50
I
/ I
C
B
= 85°C
T
a
−25°C
25°C
−10
−100
−1 000
( mA )
Collector current I
C
SJC00355AED
 V
I
C
BE
−100
V
−90
−80
−70
= 85°C
T
a
25°C
−60
−50
−40
−25°C
−30
−20
−10
0
− 0.2
− 0.4
− 0.6
− 0.8
−1.0 −1.2
0
Base-emitter voltage V
BE
 I
h
FE
C
450
V
= 85°C
CE
T
a
400
350
25°C
300
250
−25°C
200
150
100
50
0
−1
−10
−100
( mA )
Collector current I
C
= −2 V
CE
−1.4
( V )
= −2 V
−1 000

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