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Panasonic 2SB1321A Specification Sheet page 2

Silicon pnp epitaxial planar type transistors

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2SB1321A
 T
P
C
a
800
600
400
200
0
0
40
80
Ambient temperature T
 I
V
CE(sat)
−100
−10
−1
= 75°C
T
a
25°C
−25°C
− 0.1
− 0.01
− 0.01
− 0.1
−1
Collector current I
 I
f
T
E
240
200
160
120
80
40
0
1
10
Emitter current I
E
2
This product complies with the RoHS Directive (EU 2002/95/EC).
−1.2
−1.0
− 0.8
− 0.6
− 0.4
− 0.2
0
120
160
0
–2
( °C )
Collector-emitter voltage V
a
C
−100
/ I
= 10
I
C
B
−10
25°C
−1
− 0.1
− 0.01
−10
− 0.01
( A )
C
24
= −10 V
V
CB
= 25°C
T
a
20
16
12
8
4
0
−1
100
( mA )
Collector-base voltage V
 V
I
C
CE
= 25°C
T
a
= −10 mA
I
B
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
–4
–6
–8
–10
–12
( V )
CE
 I
V
BE(sat)
C
/ I
= 10
I
C
B
= −25°C
T
a
75°C
− 0.1
−1
−10
( A )
Collector current I
C
 V
C
ob
CB
= 0
I
E
f = 1 MHz
= 25°C
T
a
−10
−100
( V )
CB
SJC00079BED
 I
I
C
B
− 0.8
= −10 V
V
CE
= 25°C
T
a
− 0.7
− 0.6
− 0.5
− 0.4
− 0.3
− 0.2
− 0.1
0
−2
−4
−6
0
( mA )
Base current I
B
 I
h
FE
C
600
V
CE
500
400
300
= 75°C
T
a
25°C
200
−25°C
100
0
− 0.01
− 0.1
−1
Collector current I
C
 R
V
CER
BE
−120
I
C
T
a
−100
−80
−60
−40
−20
0
1
10
100
Base-emitter resistance R
BE
−8
−10
= −10 V
−10
( A )
= −2 mA
= 25°C
1 000
( kΩ )

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