Advertisement
Philips Semiconductors
Logic level TOPFET
OUTPUT CHARACTERISTICS
Limits are for -40˚C
T
mb
SYMBOL PARAMETER
Off-state
V
Drain-source clamping voltage
(CL)DSS
I
Drain source leakage current
DSS
On-state
R
Drain-source resistance
DS(ON)
OVERLOAD CHARACTERISTICS
V
= 5 V; T
= 25˚C unless otherwise specified.
IS
mb
SYMBOL PARAMETER
Short circuit load
I
Drain current limiting
D
Overload protection
P
Overload power threshold
D(TO)
T
Characteristic time
DSC
Overtemperature protection
T
Threshold junction
j(TO)
temperature
1 Trip time t
varies with overload dissipation P
d sc
2 This is independent of the dV/dt of input voltage V
May 2001
150˚C; typicals are for T
CONDITIONS
V
IS
I
= 10 mA
D
I
= 4 A; t
DM
V
DS
V
IS
I
= 10 A
DM
CONDITIONS
V
DS
4.4 V
-40˚C
device trips if P
which determines trip time
2
according to the formula t
D
.
IS
= 25˚C unless otherwise specified
mb
= 0 V
300 s;
0.01
p
= 40 V
T
= 25˚C
mb
4.4 V; t
300 s;
0.01
p
T
= 25˚C
mb
= 13 V
V
5.5 V;
IS
T
150˚C
mb
> P
D
D(TO)
1
T
/ ln[ P
/ P
d sc
DSC
D
3
Product specification
PIP3119-P
MIN.
TYP.
MAX.
50
-
50
60
-
-
-
0.1
-
-
-
22
MIN.
TYP.
MAX.
28.5
43
21
-
75
185
200
380
150
170
].
D(TO)
UNIT
-
V
70
V
100
A
10
A
52
m
28
m
UNIT
57
A
65
A
250
W
600
s
-
˚C
Rev 1.000
Advertisement
