Memory - LG L1150 Service Manual

3. H/W Circuit Description
E. Memory
• Memory used L1150 is designed by AMD
• Mixed Multi-Chip Package containing a 64M pSRAM and 128M Flash Memory
• MCP(Multi-Chip Package) Features
• Power Supply Voltage of 2.7 to 3.3 V
• Operating Temperature of -40°C to 85°C
• pSRAM Features
• Organization : 4 M x 16 bits
• Power Dissipation : 50mA max.(Operating), 100µA max.(Standby)
• Flash Memory Features
• Organization : 2 x 4M x 16 bits
• Power Consumption
- 2 mA active read current at 1 MHz
- 20 mA active read current at 5 MHz
- 200nA in standby or automatic sleep mode
MCP BLOCK DIAGRAM
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