External Memory Interface - LG TU550 Service Manual

3. TECHNICAL BRIEF

3.10 External memory interface

A. MSM6275
The MSM6275 device was designed to provide two distinct memory interfaces. EBI1 was targeted for
supporting high speed synchronous memory devices. EBI2 was targeted towards supporting slower
asynchronous devices such as LCD, NAND flash, SRAM, NOR flash etc.
• EBI1 Features
- 16 bit static and dynamic memory interface
- 32 bit dynamic memory interface
- 24 bits of address for static memory devices which can support up to 32MBytes on each chip select
- Synchronous burst memories supported (burst NOR, burst PSRAM)
- Synchronous DRAM memories supported
- Byte addressable memory supporting 8 bit, 16 bit and 32 bit accesses
- Pseudo SRAM (PSRAM) memory support
• EBI2 Features
- Support for asynchronous FLASH and SRAM(16bit & 8bit).
- Interface support for byte addressable 16bit devices(UB_N & LB_N signals).
- 2Mbytes of memory per chip select.
- Support for 8 bit/16bit wide NAND flash.
- Support for parallel LCD interfaces, port mapped of memory mapped(18 or 16 bit)
• 512Mb NAND(8bit) flash memory + 512Mb SDRAM (32bit)
• 1-CS(Chip Select) are used
Device
FLASH
SDRAM
LGE Internal Use Only
Interface Spec
Part Name
TY90009800C0GG
TY90009800C0GG
Table#1. External memory interface for TU550
Maker Read Access Time
Toshiba 50 ns
Toshiba 15 ns
Copyright © 2007 LG Electronics. Inc. All right reserved.
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Write Access Time
50 ns
15 ns
Only for training and service purposes