External Memory Interface - LG HB620 Service Manual

3.9 External memory interface

The MSM6280 device was designed to provide two distinct memory interfaces. EBI1 was targetedv for
supporting high speed synchronous memory devices. EBI2 was targeted towards supporting slower
asynchronous devices such as LCD, NAND flash, SRAM, etc. In addition, MSM6280 provide SD bus
interface. HB620T supports 512MByte free user memory using SD interface.
❏ EBI1 Features
- 16 bit static and dynamic memory interface
- 32 bit dynamic memory interface
- 24 bits of address for static memory devices which can support up to 32MBytes on each chip
select
- Synchronous burst memories supported (burst NOR, burst PSRAM)
- Synchronous DRAM memories supported
- Byte addressable memory supporting 8 bit, 16 bit and 32 bit accesses
- Pseudo SRAM (PSRAM) memory support
❏ EBI2 Features
- Support for asynchronous FLASH and SRAM(16bit & 8bit).
- Interface support for byte addressable 16bit devices (UB_N & LB_N signals).
- 2Mbytes of memory per chip select.
- Support for 8 bit/16bit wide NAND flash.
- Support for parallel LCD interfaces, port mapped of memory mapped(18 or 16 bit).
❏ 2Gb NAND(16bit, Large Block ) flash memory + 1Gb SDRAM (32bit)
❏ 1-CS(Chip Select) are used.
❏ The SD bus allows the dynamic configuration of the number of data line from 1 to 4 Bidirectional
data signal. After power up by default, the Device will use only DAT0. After initialization, host can
change the bus width.
Device
FLASH TYA000BC00DOGG
SDRAM TYA000BC00DOGG
Copyright © 2008 LG Electronics. Inc. All right reserved.
Only for training and service purposes
Interface Spec
Part Name Maker
Toshiba
Toshiba
[Table 3.7] External memory interface
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3. TECHNICAL BRIEF
Read Access Time
35 ns
8 ns
LGE Internal Use Only