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4. Circuit Description
4.2.3 MEMORY SUBSYSTEM
KG195 handset memory;
Memory: (NOR128MB+PSRAM32MB+NAND512MB)
Its detail is as follows.
The consists of 128M-bit NOR Type Flash memory, 32M-bit PSRAM, NAND512MB in a 107-ball FBGA
4.2.3.1 Memory
Type and capacity of memories, used for 311-0000-00015 are as follows:
Description
311-0000-00015
311-0000-00015 is the Stacked Memory comprising of the above four memories.
4.2.3.2 Memory Interface Description
MT6226 incorporates a powerful and flexible memory controller, External Memory Interface, to connect
with a variety of memory components. This controller provides one generic access scheme for FLASH
Memory, SRAM and PSRAM. Up to 8 memory banks can be supported simultaneously, BANK0 -
BANK7, with a maximum size of 64MB each. Since most of the FLASH Memory, SRAM and PSRAM
have similar AC requirements, a generic configuration scheme to interface them is desired.
This way, the software program can treat different components by simply specifying certain predefined
parameters. All these parameters are based on cycle time of system clock.
The interface definition based on such scheme is listed in following table. Note that, this interface
always operates data in Little Endian format for all types of accesses.
LGE Internal Use Only
Manufacturer
TOSHIBA
- 26 -
Type of memory
Flash Memory (NOR)
Flash Memory (NAND)
PSRAM
Copyright © 2007 LG Electronics. Inc. All right reserved.
Only for training and service purposes
Capacity
128Mb
512Mb
32Mb
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