Omron E5CK User Manual page 170

JCharacteristics
Indication Accuracy
Temperature variation influ-
ence (*2)
Voltage variation influence
(*2)
Hysteresis
Proportional Band (P)
Integral Time (I)
Derivative Time (D)
Control Period
Manual Reset Value
Alarm Setting Range
Sampling Period
Program Method
Program Size
Program Time Accuracy
Insulation Resistance
Dielectric Strength
Malfunction 10 to 55 Hz, 10m/s
Vibration Vibration
Resistance
Destruction 10 to 55 Hz, 10m/s
Malfunction
Shock
Resistance Resistance
Destruction 300 m/s
Weight
Enclosure Ratings
Memory Protection
Thermometer:
( 0.3% of indication value or
Platinum resistance thermometer:
( 0.2% of indication value or
Analog input: 0.2%FS 1 digit max.
Platinum resistance thermometer:
( 1% of PV or 2 C, whichever greater)
Thermocouple (R, S, B, W):
( 1% of PV or ( 1% of PV or C, whichever greater) C whichever greater)
Other thermocouples (K1, K2, J1, J2, E, N, T, L1, L2, U, PLII):
( 1% of PV or C, whichever greater)
Analog input (current, voltage, or remote SP input):
0.01 to 99.99%FS (in units of 0.1%FS)
0.1 to 999.9%FS (in units of 0.1%FS)
0 to 3999s (in units of 1 second)
0 to 3999s (in units of 1 second)
1 to 99s (in units of 1 second)
0.0 to 100.0% (in units of 0.1%)
-1999 to 9999 (decimal point position dependent on input type)
Temperature input: 250 ms, Analog input: 100 ms.
Set time or rate of rise programming
Max. 4 patterns, Max. 16 steps/pattern
0.2% 500 ms of set value (even-numbered steps in the "rate of rise program-
ming" setting are set to the time unit of ramp rate)
20 MW min. (at 500 VDC)
2000 VAC, 50/60 Hz for 1 min. (between electrically live terminals of different
polarities)
2
{approx. 1G} for 10 min. each in X, Y, and Z directions
2
{approx. 2G} for 2 hrs. each in X, Y, and Z directions
2
200 m/s min. {approx. 20G}, 3 times each in 6 directions (100 m/s
10G} applied to the relay)
2
min. {approx. 30G}, 3 times each in 6 directions
Approx. 170 g, adapter: approx. 10 g
Front panel: NEMA4 for indoor use (equivalent to IP66)
Fear case: IP20
Terminals: IP00
Non-volatile memory (number of writes: 100,000) (*3)
1 C, whichever greater)
0.8 C whichever greater)
1 digit max.
1 digit max. 1 digit max
1 digit max.
1%FS 1 digit max.
SPECIFICATIONS
1 digit max. (*1)
1 digit max.
2
{approx.
A–3