Power Amplifier Mmic - Nokia NSB-5 Series Technical Documentation Manual

NSB-5
System Module
Parameter
Passband
Terminating impedance
Insertion loss in passband
Amplitude ripple in passband
Return loss in passband
*Attenuation relative to fo DC ...
1600 MHz
Attenuation relative to fo 1600 ...
1820 MHz
Attenuation relative to fo 1930 ...
1990 MHz
Attenation relative to fo 2100 ...
5000 MHz
Drive level
Package L x W x H (max)

Power Amplifier MMIC

Table 34: Power amplifier electrical specifications, 50 ohms
Parameter
Operating freq. range
Supply voltage
Output power
Gain control range (over-
all dynamic range)
Gain control slope (sensi-
tivity at the linear range)
Isolation
Carrier switching time
Total efficiency: includes
all supply currents
Control current
Page 74
Typical/
Minimum
Nominal
1850
8.0
30.0
15
5.0
20.0
3.0 x 3.0 x 1.8
Symbol Test condition
GSM 1900 application circuit
Vcc
Pout Pin=0 dBm, Vcc=3.0V, Vpc=2.2V,
Tamb=+25 deg. C
Vpc=0.5 ... 2.2V
8 Vpc1 @9V peak output volt
Vpc2 @0.5V peak output volt
S=(9-0.5)/(Vpc1-Vpc2)) V/V
Vpc=0.2V, Pin=0 dbm
tr, tf Pin=0 dBm
Vpc is a pulse from 0.2 to 2.2V.
Rise time up to -0.5 dB from the
final power. Fall time vice versa.
h Pin=0 dBm, Pout=+33 dBm,
Vcc=3.5, Tamb=+25 deg. C
lpc
Nokia Mobile Phones Ltd.
PAMS Technical Documentation
Maximum Unit/Notes
1910
50
3.0 4.0
1.5 2.5
10
10
Min
1850
3.0
33
45
45
MHz
dB
dB
dB
dB
dB
dB
dB
dBm
mm/SMD, reflow
Typ Max Unit
1910 MHz
3.5 5.0 V
dBm
dB
60 V/V
-40 dB
1 us
%
+/-3 mA
Issue 1 03/01