Philips SACD 1000/001 Service Manual page 98

GB 142 9. SACD 1000
ST24E32, ST25E32
Figure 2A. DIP Pin Connections
E0
E1
E2
V SS
Table 2. Absolute Maximum Ratings
Symbol
T Ambient Operating Temperature
A
T Storage Temperature
STG
T Lead Temperature, Soldering
LEAD
V Input or Output Voltages
IO
V Supply Voltage
CC
Electrostatic Discharge Voltage (Human Body model)
V
ESD
Electrostatic Discharge Voltage (Machine model)
Notes: 1. Except for the rating ºOperating Temperature Rangeº, stresses above those listed in the Table ºAbsolute Maximum Ratingsº
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and
other relevant quality documents.
2. 100pF through 1500Ω; MIL-STD-883C, 3015.7
3. 200pF through 0Ω; EIAJ IC-121 (condition C)
DESCRIPTION (cont'd)
Each memory is compatible with the I
addressing standard, two wire serial interface
which uses a bi-directional data bus and serial
clock. The ST24/25E32carry a built-in 4 bit, unique
device identification code (1010) corresponding to
2
the I C bus definition. The ST24/25E32 behave as
Circuit-, IC descriptions and list of abbreviations
ST24E32
ST25E32
1 8 V CC
2 7 WC
3 6 SCL
4 5 SDA
AI01202B
(1)
Parameter
2
C extended
Figure 2B. SO Pin Connections
E0
E1
E2
V SS
(SO8) 40 sec
(PSDIP8) 10 sec
(2)
(3)
slave devices in the I
operations synchronized by the serial clock. Read
and write operations are initiated by a START
conditiongenerated by the bus master. The START
condition is followed by a stream of 4 bits (identifi-
cation code 1010), 3 bit Chip Enable input to form
a 7 bit Device Select, plus one read/write bit and
terminated by an acknowledge bit.
ST24E32
ST25E32
1 8 V CC
2 7 WC
3 6 SCL
4 5 SDA
AI01203C
Value Unit
°C
±40 to 125
°C
±65 to 150
215
°C
260
±0.6 to 6.5 V
±0.3 to 6.5 V
4000 V
500 V
2
C protocol with all memory