Lge Internal Use Only - LG -S367 Service Manual

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3. TECHNICAL BRIEF
The device is offered in 1.8 V Vcc Power Supply, and with x16 I/O interface. Its NAND cell provides the most
costeffective solution for the solid state mass storage market. The memory is divided into blocks that can be
erased independently so it is possible to preserve valid data while old data is erased.
The device contains 1024 blocks, composed by 64 pages. A program operation allows to write the 1056 words
page in typical 200 us and an erase operation can be performed in typical 2.0 ms on a 128 K byte block.
Data in the page can be read out at 45 ns cycle time per byte. The I/O pins serve as the ports for address and
data input/output as well as command input. This interface allows a reduced pin count and easy migration
towards different densities, without any rearrangement of footprint.
Commands, Data and Addresses are synchronously introduced using CE, WE, RE ALE and CLE input pin. The
on-chip Program/Erase Controller automates all program and erase functions including pulse repetition,
where required, and internal verification and margining of data. The modify operations can be locked using
the WP input.
The chip supports CE don't care function. This function allows the direct download of the code from the NAND
Flash memory device by a microcontroller, since the CE transitions do not stop the read operation.
The output pin R/B (open drain buffer) signals the status of the device during each operation. In a system with
multiple memories the R/B pins can be connected all together to provide a global status signal.
Even the write-intensive systems can take advantage of the H27S1G6F2B Series extended reliability of 100 K
program/ erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.
The copy back function allows the optimization of defective blocks management: when a page program
operation fails the data can be directly programmed in another page inside the same array section without
the time consuming serial data insertion phase. Data read out after copy back read is allowed
This device includes also extra features like OTP/Unique ID area, Read ID2 extension.
.

LGE Internal Use Only

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Copyright © 011 LG Electronics. Inc. All right reserved.
Only for training and service purposes

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