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Panasonic UP0KG8DG Specification Sheet page 3

Multi chip discrete silicon epitaxial planar type (sbd) silicon pnp epitaxial planar type (tr)

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Common characteristics chart
UP0KG8D_P
P
 T
T
120
80
40
0
0
40
80
Ambient temperature T
Characteristics charts of SBD
UP0KG8D_I
I
 V
F
200
160
T
= 85°C
a
120
80
40
0
0
0.2
0.4
Forward voltage V
This product complies with the RoHS Directive (EU 2002/95/EC).
-T
T
a
a
120
(°C)
a
-V
F
F
F
10
4
10
3
25°C
10
2
−25°C
10
1
0.6
0.8
-25
( V )
Ambient temperature T
F
UP0KG8D_I
-T
R
a
I
 T
R
a
V
= 10 V
R
15
55
(° C )
a
SJJ00402AED
UP0KG8DG
UP0KG8D_C
-V
D
R
C
 V
D
R
10
2
f = 1 MHz
T
= 25°C
a
10
0
0
8
16
( V )
Reverse voltage V
R
3

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