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UP0KG8DG
Electrical Characteristics T
SBD
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 250 MHz
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. * : t
measurement circuit
rr
Pulse Generator
(PG-10N)
R
= 50 Ω
s
Tr2
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C±3°C
a
Symbol
V
I
= 200 mA
F
F
I
V
= 10 V
R
R
C
V
= 0 V, f = 1 MHz
t
R
I
= I
F
R
t
rr
R
= 100 W
L
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
Symbol
V
I
= -10 mA, I
CBO
C
V
I
= -2 mA, I
CEO
C
I
V
= -50 V, I
CBO
CB
I
V
= -50 V, I
CEO
CE
I
V
= -6 V, I
EBO
EB
h
V
= -10 V, I
FE
CE
V
I
= -10 mA, I
CE(sat)
C
V
V
= -5 V, V
OH
CC
V
V
= -5 V, V
OL
CC
R
1
R
/ R
1
2
f
V
= -10 V, I
T
CB
Conditions
= 100 mA, I
= 10 mA,
rr
Input Pulse
t
t
p
r
t
10%
90%
V
R
t
= 2 µs
p
t
= 0.35 ns
r
δ = 0.05
Conditions
= 0
E
= 0
B
= 0
E
= 0
B
= 0
C
= -5 mA
C
= - 0.3 mA
B
= - 0.5 V, R
= 1 kW
B
L
= -3.5 V, R
= 1 kW
B
L
= 2 mA, f = 200 MHz
E
SJJ00402AED
Min
Typ
Max
0.50
0.58
0.1
1
25
3
Output Pulse
t
I
rr
F
t
I
= 10 mA
rr
I
= I
= 100 mA
F
R
R
= 100 Ω
L
Min
Typ
Max
-50
-50
- 0.1
- 0.5
- 0.1
80
- 0.25
-4.9
- 0.2
-30%
47
+30%
0.8
1.0
1.2
80
Unit
V
mA
pF
ns
Unit
V
V
mA
mA
mA
V
V
V
kW
MHz
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