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Multi Chip Discrete UP0KG8D Silicon epitaxial planar type (SBD) Silicon PNP epitaxial planar type (Tr) For digital circuits Features Two elements incorporated into one package (SBD + Tr) Costs can be reduced through downsizing of the equipment and reduction of the number of parts ...
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UP0KG8D Electrical Characteristics T = 25°C±3°C SBD Parameter Forward voltage Reverse current Terminal capacitance Reverse recovery time Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 250 MHz 2.
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V = 85°C 25°C −25°C ( V ) Forward voltage V UP0KG8D_I T = 10 V Ambient temperature T SJJ00334AED UP0KG8D UP0KG8D_C V (° C ) Reverse voltage V f = 1 MHz = 25°C ( V )
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UP0KG8D Characteristics charts of Tr UP0KG8D_ I V −160 = 25°C = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA −120 − 0.6 mA − 0.5 mA − 0.4 mA −80 − 0.3 mA − 0.2 mA −40...
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Request for your special attention and precautions in using the technical information and If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company.