Panasonic UP0KG8DG Specification Sheet

Multi Chip Discrete
UP0KG8DG
Silicon epitaxial planar type (SBD)
Silicon PNP epitaxial planar type (Tr)
For digital circuits
 Features
 Two elements incorporated into one package (SBD + Tr)
 Costs can be reduced through downsizing of the equipment and reduction of
the number of parts
 Basic Part Number
 MA2SD240G + UNR31A3G
 Absolute Maximum Ratings T
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
SBD
Peak forward current
Non-repetitive peak forward
surge current
Collector-base voltage
(Emitter open)
Collector-emitter voltage
Tr
(Base open)
Collector current
Total power dissipation
Junction temperature
Overall
Storage temperature
Note) * : 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Publication date: October 2007
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25°C
a
Symbol Rating
V 20
R
V 20
RRM
I 200
F(AV)
I 300
FM
I 1
FSM
V -50
CBO
V -50
CEO
I
-80
C
P 125
T
T 125
j
T –55 to +125
stg
SJJ00402AED
 Package
 Code
SSMini5-F3
 Pin Name
1: Anode
2: Base
3: Emitter
 Marking Symbol: 6K
Unit
 Internal Connection
V
V
mA
mA
A
V
V
mA
mW
°C
°C
4: Collector
5: Cathode
5 4
SBD
Tr
1 2 3
1