MSI MS-7512 User Manual page 59

M S-7512 M ainboard
Advance DRAM Configuration
Press <Enter> to enter the sub-menu and the following screen appears.
Configuration DRAM Timing by SPD
Setting to [Enabled] enables DRAM CAS# Latency automatically to be determined
by BIOS based on the configurations on the SPD (Serial Presence Detect) EEPROM
on the DRAM module.
CAS Latency(CL)
W hen the Configuration DRAM Timing by SPD sets to [Manual], the field is
adjustable.This controls the CAS latency, which determines the timing delay (in
clock cycles) before SDRAM starts a read command after receiving it.
tRCD
W hen the Configuration DRAM Timing by SPD sets to [Manual], the field is
adjustable. W hen DRAM is refreshed, both rows and columns are addressed
separately. This setup item allows you to determine the timing of the transition
from RAS (row address strobe) to CAS (column address strobe). The less the
clock cycles, the faster the DRAM performance.
tRP
W hen the Configuration DRAM Timing by SPD sets to [Manual], the field is
adjustable. This item controls the number of cycles for Row Address Strobe
(RAS) to be allowed to precharge. If insufficient time is allowed for the RAS to
accumulate its charge before DRAM refresh, refreshing may be incomplete and
DRAM may fail to retain data. This item applies only when synchronous DRAM is
installed in the system.
tRAS
W hen the Configuration DRAM Timing by SPD sets to [Manual], the field is
adjustable. This setting determines the time RAS takes to read from and write to
a memory cell.
tRFC
W hen the Configuration DRAM Timing by SPD sets to [Manual], this setting
determines the time RFC takes to read from and write to a memory cell.
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