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4.3
Electrical Characteristics (V
Input "High" Voltage
Input "Low" Voltage
Output "High" Voltage (TTL)
Output "Low" Voltage (TTL)
Output "High" Voltage (CMOS)
Output "Low" Voltage (CMOS)
Input Leakage Current
Supply Current (logic)
4.4
Timing Characteristics
Write Operation (Refer to Figure 11)
Enable Cycle Time
Enable Pulse Width "High Level"
Enable Rise/Fall Time
Address Set–up Time RS,R/W
Address Hold Time
Data Set–up Time
Data Hold Time
Read Operation (Refer to Figure 12)
Enable Cycle Time
Enable Pulse Width "High Level"
Enable Rise/Fall Time
Address Set–up Time RS,R/W
Address Hold Time
Data Delay Time
Data Hold Time
Industrial Electronic Engineers, Inc.
Van Nuys, California
= 5V ±10%)
CC
Item
Item
Item
Symbol
Condition
V
2.2
IH
V
–0.3
IL
V
I
= 0.205 mA
OH1
OH
V
I
= 1.200 mA
OL1
OL
V
I
= 0.040 mA
OH2
OH
V
I
= 0.040 mA
OL2
OL
I
V
= 0 to V
IL
IN
I
CC
Symbol
Min
t
1000
CYC
PW
450
EH
t
, t
–
Er
Ef
t
140
AS
t
10
AH
t
195
DSW
t
10
H
Symbol
Min
t
1000
CYC
PW
450
EH
t
, t
–
Er
Ef
t
140
AS
t
10
AH
t
–
DDR
t
20
DHR
SIZE
CODE IDENT NO.
A
05464
Scale: NONE
Min
Max
V
CC
0.6
2.4
–
0.4
0.9 V
CC
–
0.1 V
–
0.001
CC
10
Max
Unit
–
ns
–
ns
25
ns
–
ns
–
ns
–
ns
–
ns
Max
Unit
–
ns
–
ns
25
ns
–
ns
–
ns
320
ns
–
ns
S03805–21–0100
Rev
C
Sheet 12
Unit
V
V
–
V
V
–
V
V
CC
mA
20
mA
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