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Description of the Evaluation board
PGA26E19BA-SWEVB008 Figure 1A is a complete Half bridge power circuit featuring Panasonic High
Efficiency 600V 190mΩ X-GaN transistor in 8X8 SMD package and Panasonic own X-GaN driver AN34092B.
The SWEVB008 provides the flexibility to be configured easily to Buck, Boost, Half bridge and Full bridge
power circuit topology.
Shown in Figure 1A, High / Low side Isolated DCDC module provides the necessary bias of the gate drivers
IC1 and IC2. The isolation of these modules are more than 3000V. SMA2 is a connector for measuring the
V
of the low side device QA. JP1 jumper is for disconnecting the high side DCDC isolated power supply
GS
when operating the half bridge circuit with bootstrap bias. DBS fast recovery diode and RBS provides the
bootstrap bias. IC5 is Silicon Lab 2 input half bridge isolator/general purpose driver Si8275GB. Inputs for the
half bridge isolator driver are IN_L, IN_H and EN. There is an LED mounted on the board to indicate EN input
is high. Typical voltage for EN pin is 3.3V-5.5V. SWEVB008 can also be modified to use single input PWM
isolator/general purpose driver e.g. Si8274GB.
The evaluation board offers a general platform for testing and developing power circuits using high efficiency
X-GaN in half bridge or full bridge configuration. Figure 1B shows the basic block diagram of this board. The
power loop is made up of QB and QA (GaN-Tr devices), C2, C3, C1 and RS. C2 and C3 are high frequency
bypass capacitors. C1 is the DC link capacitor. RS 47mΩ resistor is use for measuring the I
flowing through
DS
QA device. X-GaN drivers IC1 and IC2 provides the correct driving voltage and precise current to safely drive
the output transistors QB and QA.
Figure 1B: Block diagram
PGA26E19BA-SWEVB008 Ver. 1.1
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