2. Process Capabilities 2.1 Cleanliness Standard 2.2 Available Etching Materials 2.3 Performance of the Oxford Plasmalab 80 Plus Plasma Etcher 3. Contact List and How to Become a Qualified User 3.1 Emergency Responses and Communications 3.2 Training to Become a Qualified User 4.
Oxford Plasmalab 80 Plus Plasma Etcher Fig 1: This tool is located at NFF Enterprise Center Cleanroom Room 4162 2. Process Capabilities 2.1 Cleanliness Standard Oxford Plasmalab 80 Plus Plasma Etcher is “Non-Standard” equipment for dry etching process. Version 1.0 ge 3 of 24...
NOTE: Consult NFF EC staff prior to do new materials other than above listed. Hazardous or Radioactive materials are not allowed to be etched in Oxford Plasmalab 80 Plus Plasma Etcher. 2.3 Performance of the Oxford Plasmalab 80 Plus Plasma Etcher What CAN do: Oxford RIE 80+ can etch thin films thickness (≥400A thick) or thick films...
4. Operating Procedures 4.1 System Description Oxford Plasmalab 80 Plus Plasma Etcher is a plasma processing system, which can be configured to carry out reactive ion etching(RIE). The chamber arrangement for a typical RIE process is shown as below: The electrode is powered by a 13.56 MHz RF generator.
Page 6
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST Fig 2: Typical RIE configuration Fig 3: Backing and turbo molecular, turbo process and turbo bypass pump down Backing and turbo pumps: process through the turbo pump and pump down by bypassing the turbo With this arrangement, the chamber can be vented and roughed out without stopping the turbo pump.
Page 7
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST Description of Oxford RIE 80+ Fig 3: Description of major system components for Oxford RIE 80+. A stainless steel cabinet with removable access panels encloses the mechanical and electronic components of the system and provides a support for the processing chamber.
Page 8
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST coolant cooling is provided for the table where Reactive Ion Etching process is used. Controls and indicators The controls and indicators are mounted on the front of the unit as shown as below: Fig 4: diagram of controls and indicators ...
Page 9
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST Emergency OFF Button Viewing port Chamber Hoist Up/Down Selection Switch Power ON LED (L.H.S.) System ON LED (R.H.S.) Chamber Hoist Buttons Fig 5: Real picture of of controls and indicators Chamber Hoist buttons and up/down selection switch: To raise or lower the chamber top, the up/down selection switch is set to the required position, then both chamber hoist buttons are pressed.
Page 10
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST Emergency off and Interlock facilities Emergency off (EMO) and interlock facilities are provided to shut down the machine in an emergency and to stop process until the system is fully initiated. An emergency off switch, with normally-closed contacts, is mounted on top of the console. The switch is activated by pressing a red “Emergency Off”...
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST Machine protections fitted where appropriate: 1. A nitrogen pressure switch, to detect adequate purge pressure to turbo molecular pump bearings or; 2. A nitrogen flow meter, to detect purge gas flow to pump bearings. 3. Water flow switch. 4.2 Safety Warnings This equipment can cause injury if not used in a cautious manner.
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST 8. Never smoke or eat in the “clean room” or where gases are stored. In addition to the fire risks and particulate contamination presented by smoking, some chemicals when burnt generate carcinogenic or toxic compounds. Operation Rules 1. If an equipment failure while being used, never try to fix the problem by yourself.
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST Pump-down Interlocks Pressure Interlocks System Interlocks Fig 6: System, Process and Pump-down Interlocks 4.4 Status checks 1. Check the NFF website for reservations, problems and to see if it is already enabled by another user. 2. Check for an EMPTY sign attached to the machine. Do not use if an IN USE signs or MAINTENANCE sign is there.
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST that the vent sequence is controlled by a timer to allow time for the turbo pumps to be purged. 3. When the ´Vent Time Left´ timer has decremented to zero, the process chamber has been vented. A clear gap between the chamber lid and the chamber should be seen.
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST 4.8 Load wafers 1. Place your sample face up in the center of the substrate holder. Before start up, please wear gloves to reduce contamination and protect the hands. 2. Maximum 3 pieces of 4” full wafers are allowed into the chamber per run. 3.
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST 3. Ensure the process chamber lid is in its “down” position. If you intend to carry out process run, you will need to open the process chamber lid, place a wafer on the wafer holder in the process chamber, then close the process chamber lid.
Page 17
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST 6. To run the loaded recipe, select the Run button. The recipe will be automatically run and the Chamber 1 page will be displayed to allow you to monitor its progress. 7. If there is anything wrong, press the ABORT button to abort the process. Then go to Step 4 and select the correct process.
Page 18
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST or another process run can be carried out. Creating and Editing Recipes This page is used to assemble and store in memory for all set points and instructions, which make up a Recipe for an Automatic Mode run. These recipes consist of a sequence of process Steps.
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST ■Loop Step: Terminates a Repeat Step group ■Insert Step: Creates "a gap"; above the selected step to allow another step to be dragged into the list. ■Delete Step: Deletes the selected step from the list. ■Cancel: Closes the Step Commands pop-up menu. 4.12 Venting the Chamber (Before Unloading Wafers) 1.
Page 20
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST are in green. 4. Select the Set Base Pressure button, and then enter the required process chamber base pressure if different from the default (1.80e-05Torr). Click OK. 5. Click on the rough pump mimic to start the pump. 6. Select the Evacuate button for the process chamber. You will be prompted to enter a wafer identity, please click Cancel to pump down without the wafer identity.
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST Appendix (Details information for recipes) Table 1: Process Gases Gas Number Maximum Flow (sccm) Gas 1 Gas 2 Gas 3 Gas 4 Gas 5 Gas 6 Gas 7 Gas 8 Table 2: Recipe Parameters for dry etching Recipe Etch Materials Gases and Chamber RF Power...
Page 22
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST Table 3: Recipe Parameters for dry etching Recipe Etch Materials Step Function Steps CLEAN 1. PUMP DOWN 1.80e-06 Torr 2. O CLEAN 0 H *8 M 0 S SiNx 1. PUMP DOWN 1.80e-06 Torr 2. CHF (ER=1000A/MIN) 0 H *5 M 0 S 3.
Page 23
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST Load Recipes Page Process Chamber Page Process Log View Page Process Recipes Page Process Recipes Process Step Editor Process recipes Process Step Editor Page (for Pump Down) page (for Dry Etching Process) Version 1.0 Page 23 of 24...
Page 24
NANOSYSTEM FABRICATION FACILITY (NFF), HKUST Process Recipes Process Step Editor Process Recipes Process Step Editor Page (for N2 gas Purge Cycle) Page (for Pump Down) Pull Down Menu - Process Menu Pull Down Menu - System Menu Chamber Status - With Sample in Chamber Status - Without Sample in Chamber Chamber ...
Need help?
Do you have a question about the Plasmalab 80 Plus and is the answer not in the manual?
Questions and answers