1 Electrical Characteristic
V DD = 3.3 V,T OP = 25 ° C,F RF = 433.92 MHz, sensitivity is measured by receiving a PN9 coded data and matching
impedance to 50Ω under 0.1% BER standard.Unless otherwise stated, all results are tested on the CMT2380F17-EM
evaluation board.
1.1 Recommended Operation Condition
Parameter
Operating power voltage
Operating temperature
RF power voltage slope
Voltage slope
AHB clock frequency
APB1 clock frequency
APB2 clock frequency
1.2 Absolute Maximum Rating
Parameter
Supply Voltage
Interface Voltage
Junction Temperature
Storage Temperature
Soldering Temperature
[2]
ESD Rating
Latch-up Current
MCU-VDD maximum current to
Ground
MCU pin maximum sink current
Notes:
[1]. Exceeding the Absolute Maximum Ratings may cause permanent damage to the equipment. This value is a pressure rating
and does not imply that the function of the equipment is affected under this pressure condition, but if it is exposed to absolute
maximum ratings for extended periods of time, it may affect equipment reliability.
[2]. CMT2380F64 is a high performance RF integrated circuit. The operation and assembly of this chip should only be performed
on a workbench with good protection.
Caution! ESD sensitive device. Precaution should be used when handling the device in order to
prevent permanent damage.
Symbol
Condition
V
DD-RF
V
CPU working rate 0-48 MHz
MCU
T
OP
V
RF-PSR
V
MCU-PSR
f
HCLK
f
PCLK1
f
PCLK2
Symbol
V
DD
V
IN
T
J
T
STG
T
Retention at least 30 s
SDR
Human body mode(HBM)
@ 85 ℃
Rev 0.3 | 8 / 83
Min.
1.8
1.8
-40
1
10
0
0
0
Conditions
-0.3
-0.3
-40
-50
-100
CMT2380F64
Typ.
Max.
3.6
3.6
85
48
48
48
Min
Max
3.6
3.6
125
150
255
-2
2
100
200
16
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Unit
V
V
℃
mV/us
mV/us
MHz
MHz
MHz
Unit
V
V
℃
℃
℃
kV
mA
mA
mA
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