Iso - From Case Ii; Simulation With Switch Leakage Error; Dc2732A_Basic - Linear ANALOG DEVICES DC2732A-A Manual

APPENDIX D: MEASURE HALL SENSOR WITH DC2732A_BASIC
CALCULATE Y – FROM CASE II:
ISO

SIMULATION WITH SWITCH LEAKAGE ERROR

Switch open
BAT
{BAT}
Note: Typical Rn = Rp, p = 0.5. Due to tolerances the real values might
be different and could be calibrated as shown in the example values above.
IDSS: MOSFET Zero gate voltage drain current (VGS = 0), e.g. STD4NK100Z 50 A@125dC
Table: Error of Isolation Resistance Measurement (IDSS = 10μA, Rd = 38k)
Error of R Measurement
iso–
2.50E+05 1.00E+06
2.50E+05 –2% –2%
1.00E+06 –2% –2%
5.00E+06 –2% –2%
1.00E+07 –2% –2%
Table: Error of Isolation Resistance Measurement (IDSS = 50μA, Rd = 10k)
Error of R Measurement
iso–
R 2.50E+05 1.00E+06
iso±
2.50E+05 –10% –10%
1.00E+06 –12% –11%
5.00E+06 –23% –21%
1.00E+07 –33% –31%
For more details please contact Analog Devices.
Ra
{Rp*(1-p)}
R
iso+
{Risp}
Rb
{Rp*p}
I1
VxI
Chassis
Rc
{Rn*(1-n)}
R
V1I
iso–
{Risn}
Rd
{Rn*n}
5.00E+06 1.00E+07
–3% –3%
–2% –2%
–2% –2%
–2% –2%
5.00E+06 1.00E+07
–10% –10%
–11% –11%
–21% –21%
–31% –31%
DEMO MANUAL DC2732A
Switch closed
BAT1
R
iso1+
{Risp}
VxII
Chassis
{BAT}
R
iso1–
Ra1
{Risn}
{Rp*(1-p)}
Error of R Measurement
iso+
2.50E+05
2.50E+05 –3%
1.00E+06 –3%
5.00E+06 –6%
1.00E+07 –10%
Error of R Measurement
iso+
R 2.50E+05
iso±
2.50E+05 –10%
1.00E+06 –9%
5.00E+06 –8%
1.00E+07 –8%
Rc1
{Rn*(1-n)}
V1II
Rb1
{Rp*p}
Rd1
{Rn*n}
1.00E+06 5.00E+06
–2% –2%
–3% –3%
–5% –5%
–9% –8%
1.00E+06 5.00E+06
–9% –10%
–8% –8%
–8% –8%
–8% –8%
1.00E+07
–2%
–3%
–5%
–8%
1.00E+07
–11%
–9%
–8%
–8%
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